Engineering topics

Fratello, V. J.

Publications and source records attributed to Fratello, V. J..

7 records

NASA NTRS1986

Growth-induced anisotropy in bismuth - Rare-earth iron garnets

The bismuth-doped rare-earth iron garnets, (R3-x-yBixPby)Fe5O12 (Bi:RIG, R = Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y), were prepared under constant growth conditions to investigate the influence of ionic species on the bismuth-based growth-induced uniaxial anisotropy K(u) exp g. The effect of ionic species on growth-induced anisotropy in Bi:RIG was not consistent with the ionic size model of site ordering. In particular, Bi:SmIG, Bi:EuIG, and Bi:TbIG displayed high growth-induced anisotropies, up to 331,000 erg/cu cm at room temperature for x of about 0.5. The temperature dependence of these K(u) exp gs was somewhat higher than that of the well studied Bi:YIG. The site ordering of Bi can be modeled by assuming that small, low-oxygen-coordination BiOw exp +3-2 w melt complexes have a strong site selectivity for small, high-oxygen coordination sites at the growth interface.

Fratello, V. J.↗

NASA NTRS1986

Effect of diamagnetic substitution on growth-induced anisotropy in (YBi)3Fe5O12

Films of (Y/3-x-y/Bi/x/Pb/y/)(Fe/5-z/Ga/z/)O12(Z = 0-1.1) and (Y/3-x-y/Bi/x/PB/y/)(Fe/5-w/In/w/)O12(w = 0-O.6) garnets were prepared by liquid-phase epitaxy. The effects of tetrahedral Ga and octahedral In substitution on the Bi-based growth-induced uniaxial anisotropy in (Ybi)3Fe5O12 films were measured. Both Ga and In resulted in a linear decrease in the anisotropy with increasing substitution. The effect of octahedral In was twice that of tetrahedral Ga.

Fratello, V. J.↗

NASA NTRS1986

Four-micron period ion-implanted bubble test circuits

Packaged magnetic bubble test circuits made with 4-micron period ion-implanted circuits were operated over -55 to +110 C. The circuits used bidirectional transfer and nondestructive detection and were made on bismuth-containing magnetic garnet films. Passivated circuits that incorporated an improved transfer conductor design were operated on films with higher Gilbert damping parameters. Potential advantages to using films with lower bubble aspect ratios for ion-implanted circuits are discussed. However nondestructive read-out detection was not realized with these 'flat' bubbles.

Nelson, T. J.↗

NASA NTRS1985

Variation of the temperature coefficient of collapse field in bismuth-based bubble garnets

An approximation to the collapse-field formula is used to show its dependence on magnetization and wall energy and the effect of additions of Gd, Sm, and Eu on 1-micron Bi:YIG bubble materials. The collapse field, magnetization, and wall energy are fitted to quadratic functions of temperature from -50 to 150 C. It is shown that the addition of the various classes of rare earths reduces the temperature derivative of the collapse field in Bi:YIG. Gd influences the collapse field through the magnetization, Sm affects it through the domain wall energy, and Eu does both. The singular magnetic properties of Eu result in the most nearly constant temperature dependence of the collapse field and the best match to a barium-ferrite bias magnite.

Fratello, V. J.↗

NASA NTRS1984

High Curie temperature drive layer materials for ion-implanted magnetic bubble devices

Ion implantation of bubble garnets can lower the Curie temperature by 70 C or more, thus limiting high temperature operation of devices with ion-implanted propagation patterns. Therefore, double-layer materials were made with a conventional 2-micron bubble storage layer capped by an ion-implantable drive layer of high Curie temperature, high magnetostriction material. Contiguous disk test patterns were implanted with varying doses of a typical triple implant. Quality of propagation was judged by quasistatic tests on 8-micron period major and minor loops. Variations of magnetization, uniaxial anisotropy, implant dose, and magnetostriction were investigated to ensure optimum flux matching, good charged wall coupling, and wide operating margins. The most successful drive layer compositions were in the systems (SmDyLuCa)3(FeSi)5O12 and (BiGdTmCa)3(FeSi)5O12 and had Curie temperatures 25-44 C higher than the storage layers.

Fratello, V. J.↗

NASA NTRS1980

The mechanism of growth of quartz crystals into fused silica

It is proposed that the growth of quartz crystals into fused silica is effected by a mechanism involving the breaking of an Si-O bond and its association with an OH group, followed by cooperative motion of the nonbridging oxygen and the hydroxyl group which results in the crystallization of a row of several molecules along a crystalline-amorphous interfacial ledge. This mechanism explains, at least qualitatively, all the results of the earlier experimental study of the dependence of quartz crystal growth upon applied pressure: large negative activation volume; single activation enthalpy below Si-O bond energy; growth velocity constant in time, proportional to the hydroxyl and chlorine content, decreasing with increasing degree of reduction, and enhanced by nonhydrostatic stresses; lower pre-exponential for the synthetic than for the natural silica.

Fratello, V. J.↗

NASA NTRS1980

Dependence of growth rate of quartz in fused silica on pressure and impurity content

The effects of pressure, temperature, and some variations in impurity content on the growth rate u of quartz into fused silica were measured. Under all conditions the growth rate was interface controlled and increased exponentially with pressure with an activation volume averaging -21.2 cu cm/mole. The activation enthalpy for all specimens is extrapolated to a zero pressure value of 64 kcal/mole, within the experimental uncertainty. At a given stoichiometry the effect of hydroxyl content on growth rate is described entirely by a linear term C(OH) in the prefactor of the equation for the growth rate. The effect of chlorine impurity can be described similarly. Also u is increased as the ideal stoichiometry is approached from the partially reduced state.

Fratello, V. J.↗