NASA NTRS · 19860056447
Four-micron period ion-implanted bubble test circuits
Abstract
Packaged magnetic bubble test circuits made with 4-micron period ion-implanted circuits were operated over -55 to +110 C. The circuits used bidirectional transfer and nondestructive detection and were made on bismuth-containing magnetic garnet films. Passivated circuits that incorporated an improved transfer conductor design were operated on films with higher Gilbert damping parameters. Potential advantages to using films with lower bubble aspect ratios for ion-implanted circuits are discussed. However nondestructive read-out detection was not realized with these 'flat' bubbles.
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Nelson, T. J., Fratello, V. J., Muehlner, F. J., Roman, B. J., Slusky, S. E. G.. 1986-03-01. Four-micron period ion-implanted bubble test circuits. https://ntrs.nasa.gov/citations/19860056447
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