Engineering topics
Frerking, Margaret A.
Publications and source records attributed to Frerking, Margaret A..
JPL Technology Readiness Assessment Guideline
New capabilities in spaceflight missions are enabled by new technologies. Transitioning new technology to spaceflight elements is difficult and introduces risk, but finding the right balance between benefit and risk leads to scientific advancements and novel space missions. A clear understanding of the risks of new technology can create an environment where innovation is nurtured rather than avoided. The Technology Readiness Level (TRL) was developed as a metric for the maturity of new technology, but, in the past, assessing the TRL was often done informally and inconsistently. This frequently led to discrepancies between the TRL as perceived by the technologist and that perceived by a project. JPL has developed a guideline for their projects to provide a basis for a consistent Technology Readiness Assessment (TRA). Highlights of this guideline are presented here. It is anticipated that the implementation of this guideline will enable the hand-off from technologists to project engineers leading to greater acceptance of technologies by flight projects. On completion of a satisfactory TRA, an agreement can be made between the parties on the maturation plan required for successful infusion of the technology into a flight mission.
The U.S. Rosetta Project : eighteen months in flight
In this paper we will update the status of the instruments following the commissioning exercise, an exercise that was only partially complete when a report was prepared for the 2005 IEEE conference.We will present an overview of the 2005 Earth/Moon activities, and the Deep Impact set of observations. The paper will also provide an update of the role of NASA's Deep Space Network in supporting an ESA request for Delta Difference One-way Ranging to provide improved tracking and navigation capability in preparation for the Mars flyby in 2007.
Compact Hererodyne 220 GHz Receiver For Planetary Spectroscopy
Solar System spectroscopy yields information about the physics, chemistry and dynamics of planetary atmospheres. Many molecular species, such as CO,water have very strong spectral emission lines in the millimeter and sumillimeter wave regions.
Miniature Low Power Submillimeter-Wave Spectrometer for Detection of Water in the Solar System
Mass and power for the next generation of NASA's heterodyne spectrometers must be greatly resuced to satisfy the constraints of future small-spacecraft missions.
Miniature Low Power Submillimeter-Wave Spectrometer for Detection of Water in the Solar System
The mass and power of a heterodyne spectrometer must be greatly reduced to satisfy small space mission constraints. We report on a 220 GHz receiver, requiring less than 4.8 W, with a mass of 1.25 kg. The mass and power savings are achieved through reducing components to a minimum, while providing performance for a Martian atmospheric sounder.
Miniature Low Power Submillimeter-Wave Spectrometer For Detection of Water in The Solar System
Mass and power for the next generation of NASA's heterodyne spectrometers must be greatly reduced to satisfy the constraints of future small-spacecraft missions. Here we present a new receiver concept for remote sensing in the Solar System, with greatly reduced mass, power, and size compared to instruments implemented in current missions.
Submillimeter-Wave Receiver Containing An SIS Mixer
Submillimeter-wave heterodyne receiver designed to operate at input frequencies in range of 480 to 650 GHz. Intended for use in radio astronomy at frequency of 547 or 626 GHz. Heart of receiver is waveguide mixer that includes adjustable backshort and electric-field-plane tuner. Mixing element high-current-density superconductor/insulator/superconductor (SIS) tunnel junction integrated with superconductive microstrip radio-frequency circuit that tunes out capacitance of junction; matching complex impedance of junction to available tuning range of waveguide mount.
Back-To-Back Barrier Varactor Frequency Multipliers
Two reports present further detailed information about odd-harmonic frequency-multiplier devices described in "Barrier/n/n+ Varactor Frequency Multipliers" (NPO-18428). Devices comprise Schottky-barrier/n/n+ diodes in planar back-to-back configuration.
Integrated back to back barrier-N-N(+) varactor diode tripler using a split-waveguide block
The back-to-back barrier-N-N(+) (bbBNN) varactor is a nonlinear device being developed for frequency multiplier applications above 100 GHz. Its symmetrical C-V characteristic, low series resistance, freedom from external bias and suitability to planarization make it an ideal choice for high frequency, low power, odd harmonic generation. In this paper, the performance of a 220-GHz waveguide tripler using, for the first time, a planar GaAs bbBNN device integrated on a quartz microstrip circuit is presented. A new split-waveguide block design has been employed to provide the proper embedding impedances to the device at the input and third harmonic output frequencies. A flange-to-flange tripling efficiency of 7% has been obtained at 220 GHz with an output power in excess of 700 mu W. This is believed to be the highest conversion efficiency yet reported for a tripler with an integrated device at this frequency. Theoretical calculations indicate that substantial improvement is possible with modest changes to the device and circuit parameters.
Improved Fabrication Of Back-To-Back Planar Varactor Diodes
Improved method for fabrication of GaAs-based back-to-back planar varactor diodes simplifies processing and makes fabricated devices less vulnerable to damage at various intermediate process steps. Expected to increase device yields and offers several improvements over older method. Process steps modified and juggled providing simplified processing of devices that are more rugged.
Single-Barrier-Varactor 200-GHz Tripler
Single-barrier varactor in crossed waveguide serves as experimental frequency-tripling device with output at frequencies ranging from 186 to 207 GHz. Varactor has symmetrical capacitance-vs.-voltage characteristic and antisymmetrical dc current-vs.-voltage characteristic. As result, generates only odd-harmonic currents when radio-frequency voltage applied at zero dc bias.
Planar varactor frequency multiplier devices with blocking barrier
The invention relates to planar varactor frequency multiplier devices with a heterojunction blocking barrier for near millimeter wave radiation of moderate power from a fundamental input wave. The space charge limitation of the submillimeter frequency multiplier devices of the BIN(sup +) type is overcome by a diode structure comprising an n(sup +) doped layer of semiconductor material functioning as a low resistance back contact, a layer of semiconductor material with n-type doping functioning as a drift region grown on the back contact layer, a delta doping sheet forming a positive charge at the interface of the drift region layer with a barrier layer, and a surface metal contact. The layers thus formed on an n(sup +) doped layer may be divided into two isolated back-to-back BNN(sup +) diodes by separately depositing two surface metal contacts. By repeating the sequence of the drift region layer and the barrier layer with the delta doping sheet at the interfaces between the drift and barrier layers, a plurality of stacked diodes is formed. The novelty of the invention resides in providing n-type semiconductor material for the drift region in a GaAs/AlGaAs structure, and in stacking a plurality of such BNN(sup +) diodes stacked for greater output power with and connected back-to-back with the n(sup +) GaAs layer as an internal back contact and separate metal contact over an AlGaAs barrier layer on top of each stack.
A Back-To-Back Barrier-N-N+ (bbBNN)Diode Tripler at 200 GHz
This paper describes the performance of planar back-to-back Barrier-N-N+ (bbBNN) devices for mm and submm wave multiplier applications. A technique has been developed for characterizing planar bbBNN devices with Vector Network Analyzer, which gives both the series resistance and voltage dependent capacitance of the device.
A 200 GHz tripler using a single barrier varactor
The GaAs Schottky varactor diode is the nonlinear device most commonly used for submillimeter wave harmonic generation. Output power adequate to serve as a local oscillator source for SIS tunnel junctions has been demonstrated with whisker-contacted GaAs Schottky varactor multipliers in waveguide mounts up to about 800 GHz. In this paper, we present results for a tripler to 200 GHz using a new multiplier device, the single barrier varactor (SBV). This new varactor has potential advantages such as stronger nonlinearities or special symmetry, which make it attractive for submillimeter wave frequency multiplication. The performance of a tripler using a SBV over a output frequency range from 186 to 207 GHz has been measured in a crossed waveguide mount. The theoretical performance of the device has been calculated using large signal analysis. A comparison of theoretical and measured results and a discussion of various losses in the mount and the varactor have also been presented.
Novel heterojunction varactors
An account is given of new varactor multiplier designs, for mm-wave and sub-mm-wave receiver systems, which have their bases in heterostructure layers and exhibit either stronger capacitance nonlinearity or a special symmetry of characteristics. While barrier-n-layer-n(+) C-V characteristics yield superior performance at low pump powers, the symmetric C-V characteristics of the single-barrier varactor devices yield efficient low-order harmonic generation. Capacitance nonlinearity in these devices is due to depletion of a semiconductor drift region.
Barrier/n/n+ Varactor Frequency Multipliers
Barrier/n/n+ (BNN+) varactor diodes developed as frequency multipliers at millimeter and submillimeter wavelengths. Devices required to serve as frequency triplers or quintuplers to provide powers of order of milliwatts at frequencies from 0.1 THz to about 1 THz. Feature Mott or heterojunction barriers and back-to-back diode configuration, which make it possible to obtain symmetrical capacitance-versus-voltage characteristics with high ratio between maximum and minimum capacitances. Extension of barrier/intrinsic/n+ (BIN+) concept described in "BIN Diode for Submillimeter Wavelengths" (NPO-17258).