NASA NTRS · 19920000446
Barrier/n/n+ Varactor Frequency Multipliers
Abstract
Barrier/n/n+ (BNN+) varactor diodes developed as frequency multipliers at millimeter and submillimeter wavelengths. Devices required to serve as frequency triplers or quintuplers to provide powers of order of milliwatts at frequencies from 0.1 THz to about 1 THz. Feature Mott or heterojunction barriers and back-to-back diode configuration, which make it possible to obtain symmetrical capacitance-versus-voltage characteristics with high ratio between maximum and minimum capacitances. Extension of barrier/intrinsic/n+ (BIN+) concept described in "BIN Diode for Submillimeter Wavelengths" (NPO-17258).
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Lieneweg, Udo, Tolmunen, Timo J., Frerking, Margaret A., Maserjian, Joseph. 1992-08-01. Barrier/n/n+ Varactor Frequency Multipliers. https://ntrs.nasa.gov/citations/19920000446
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