Technique for producing bipolar and MOS field effect transistors on a single chip
Several cycles of photoetching, dopant deposition, and drive-in produce selectively-doped regions and semiconductor junctions within a single chip.
Gallagher, R. C.↗
Engineering topics
Gallagher, R. C.
Publications and source records attributed to Gallagher, R. C..
Lateral PNP bipolar transistor with aiding field diffusions
Fabrication technique produces field aided lateral PNP transistors compatible with micropower switching circuits. The sub-collector diffusion is performed with phosphorus as the dopant and the epitaxy is grown using the higher temperature silicon tetrachloride process.
Gallagher, R. C.↗
Conceptual techniques for reducing parasitic current gain of lateral pnp transistors
Two techniques have been conceptually proposed as possible means of reducing parasitic beta in lateral p-n-p transistors. One method uses a degenerate substrate and high concentration P /plus/ guard-ring diffusion, another places the base contact at the center of an annular ring structure.
Gallagher, R. C.↗
Diffusion technique stabilizes resistor values
Reduction of the contact resistance stabilizes the values, over a broad temperature range, of resistors used in linear integrated circuits. This reduction is accomplished by p-plus diffusion under the alloyed aluminum contacts.
Gallagher, R. C.↗
Silicon monolithic micropower flip-flop utilizing hybrid technology.
Silicon monolithic micropower flip-flop integrated circuit from straightforward translation of conventional separate components
INTEGRATED CIRCUIT↗
Development of a prototype molecular system using the CLEM functional electronic block.
Functional electronic block used to breadboard molecular circuits of prototype lunar TV camera for Apollo Lunar Excursion Module /LEM/
SPACECRAFT TELEVISION↗