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Galloway, Z.

Publications and source records attributed to Galloway, Z..

13 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

A first look at AS-ROC: a Si-Ge integrated chip readout for fast timing

Abstract Advances in timing detector technology require new specialized readout electronics. Applications demand below 10 ps time of arrival resolution and low power for a low repetition rate. A possible path to achieve O(10 ps) time resolution is an integrated chip using Silicon Germanium (SiGe) technology. Using DoE SBIR funding, Anadyne, Inc., in collaboration with UC Santa Cruz, has developed a prototype SiGe front-end readout chip optimized for low power and timing resolution. Two versions of the chip were produced with performance in simulation: a more power version with 10 ps resolution at 5 fC with 1.1 mW/channel, and a less power version with 10 ps resolution at 8 fC with 0.6 mW/channel.The chip was produced at Tower Semiconductor with 350 nm technology. The ASIC from the prototype run shows good performance: a rise time of 0.7–1 ns and 25 mV per fC response with RMS noise <1 mV. Simulation and results from the prototype will be reported in this paper.

Instruments & Instrumentation↗
DOE OSTI2021

Silicon strip defects and their impact on electrical performance of readout electronics

Abstract In preparation for the High Luminosity LHC (HL-LHC) runs, the ATLAS inner detector will be completely replaced with an all silicon Inner Tracker (ITk). Hybrid silicon pixel modules will be used for the innermost tracking layers, and silicon micro-strip detectors will be used the outer layers of the tracker. During the production of the detector, the sensors, readout electronics, and other components will undergo a series of quality control (QC) and quality assurance tests. Defects in the fabrication of the sensors will be flagged early in the manufacturer's and ATLAS QC tests. A study of the influence of sensor defects was performed to assess the characteristics of these defects in completed modules, and whether any defect posed a risk to the operation of the front-end readout electronics. All defects were found to have no impact on the performance of the front-end readout electronics for healthy amplifier channels, and defects that short the coupling between the strip implant and the metal readout electrode were only noticeable for strip leakage currents in excess of 250 nA, beyond the end-of-life currents expected for most sensors at the HL-LHC.

Instruments & Instrumentation↗
DOE OSTI2020

Radiation hardness of the low gain avalanche diodes developed by NDL and IHEP in China

This paper presents a study on the radiation hardness of low gain avalanche detector (LGAD) developed by the Novel Device Laboratory (NDL) in Beijing and the Institute of High Energy Physics (IHEP) of Chinese Academy of Sciences, in the context of an upgrade project of the ATLAS detector for the high luminosity phase of LHC. NDL LGAD sensors with different layouts, epitaxial resistivity and doping profile were irradiated up to 1.02 × 10 15 n eq /cm 2 by 70 MeV protons at Cyclotron and Radioisotope Center (CYRIC). The timing resolution of NDL LGAD sensors reached 50 ps and the collected charge reached 3 - 4 fC after irradiation.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

Experimental Study of Acceptor Removal in UFSD

The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. In this study, the effect is tested both with capacitance–voltage, C–V, measurements of the doping concentration and with measurements of charge collection, CC, using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C–V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

The ABC130 barrel module prototyping programme for the ATLAS strip tracker

For the Phase-II Upgrade of the ATLAS Detector [1], its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100% silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. The construction of each module consists of a series of assembly and quality control steps, which were engineered to be identical for all production sites. In order to develop the tooling and procedures for assembly and testing of these modules, two series of major prototyping programs were conducted: an early program using readout chips designed using a 250 nm fabrication process (ABCN-250) [2,2] and a subsequent program using a follow-up chip set made using 130 nm processing (ABC130 and HCC130 chips). This second generation of readout chips was used for an extensive prototyping program that produced around 100 barrel-type modules and contributed significantly to the development of the final module layout. This paper gives an overview of the components used in ABC130 barrel modules, their assembly procedure and findings resulting from their tests.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Study of CMOS strip sensor for future silicon tracker

Monolithic silicon sensors developed with High-Voltage CMOS (HV-CMOS) processes have become highly attractive for charged particle tracking. Compared with the standard CMOS sensors, HV-CMOS sensors can provide larger and deeper depletion regions that lead to larger signals and faster charge collection. They can provide high position resolution, low material budget, high radiation hardness and low cost that are desirable for high performance tracking in harsh collision environment. Various studies have been conducted to explore the technology feasibility for the large-area tracking systems at future collider experiments. CHESS (CMOS HV/HR Evaluation for Strip Sensor) sensor series have been developed as an alternative solution to the conventional silicon micro-strip detectors for the ATLAS inner tracker upgrade. The first prototype (named CHESS1) was to evaluate the diode geometry and the in-pixel analog electronics. Obtained test results were used to optimize the second prototype (named CHESS2). CHESS2 was implemented with a full digital readout architecture and realized as a full reticle sized monolithic sensor. Here, the basic characteristics of the CHESS2 prototype sensors and their performance in response to different input signals are presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Layout and performance of HPK prototype LGAD sensors for the High-Granularity Timing Detector

The High-Granularity Timing Detector is a detector proposed for the ATLAS Phase II upgrade. The detector, based on the Low-Gain Avalanche Detector (LGAD) technology, will cover the pseudo-rapidity region of 2.4 < |n| < 4.0 with two end caps on each side and a total area of 6.4 m 2 . The timing performance can be improved by implanting an internal gain layer that can produce signals with a fast rising edge. It significantly improves the signal-to-noise ratio. The required average timing resolution per track for a minimum ionizing particle is 30 ps at the start and 50 ps at the end of the HL-LHC operation. This is achieved with several layers of LGAD. The innermost region of the detector would accumulate a 1MeV neutron-equivalent fluence up to 2.5 10 15 n eq /cm 2 including a safety factor of 1.5 before being replaced during the scheduled shutdowns. The addition of this new detector is expected to play an important role in the mitigation of high pile-ups at the HL-LHC. The layout and performance of the various versions of LGAD prototypes produced by Hamamatsu (HPK) have been studied by the ATLAS Collaboration. The breakdown voltages, depletion voltages, inter-pad gaps, collected charge as well as the time resolution have been measured and the production yield of large size sensors has been evaluated.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Strip sensor performance in prototype modules built for ATLAS ITk

ATLAS experiment is preparing an upgrade of its detector for High-Luminosity LHC (HL-LHC) operation. The upgrade involves installation of the new all-silicon Inner Tracker (ITk). In the context of the ITk preparations, more than 80 strip modules were built with prototype barrel sensors. They were tested with electrical readout on a per-channel basis. In general, an excellent performance was observed, consistent with previous ASIC-level and sensor-level tests. However, the lessons learned included two phenomena important for the future phases of the project. First was the need to store and test the modules in a dry environment due to humidity sensitivity of the sensors. The second was an observation of high noise regions for 2 modules. The high noise regions were tested further in several ways, including monitoring the performance as a function of time and bias voltage. Additionally, direct sensor-level tests were performed on the affected channels. The inter-strip resistance and bias resistance tests showed low values, indicating a temporary loss of the inter-strip isolation. A subsequent recovery of the noise performance was observed. Here we present the test details, an analysis of how the inter-strip isolation affects the module noise, and the relationship with sensor-level quality control tests.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Radiation campaign of HPK prototype LGAD sensors for the High-Granularity Timing Detector (HGTD)

In this work, we report on the results of a radiation campaign with neutrons and protons of Low Gain Avalanche Detectors (LGAD) produced by Hamamatsu (HPK) as prototypes for the High-Granularity Timing Detector (HGTD) in ATLAS. Sensors with an active thickness of were irradiated in steps of roughly 2 up to a fluence of 3. As a function of the fluence, the collected charge and time resolution of the irradiated sensors will be reported for operation at °C.

47 OTHER INSTRUMENTATION↗