Experimental Study of Acceptor Removal in UFSD

Jin, Y.; Ren, H.; Christie, S.; Galloway, Z.; Gee, C.; Labitan, C.; Lockerby, M.; Martinez-McKinney, F.; Mazza, S. M.; Padilla, R.; Sadrozinski, H. F. -W.; Schumm, B.; Seiden, A.; Wilder, M.; Wyatt, W.; Zhao, Y.; Arcidiacono, R.; Cartiglia, N.; Ferrero, M.; Mandurrino, M.; Siviero, F.; Sola, V.; Tornago, M.; Cindro, V.; Howard, A.; Kramberger, G.; Mandić, I.; Mikuž, M.

doi:10.1016/j.nima.2020.164611

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DOE OSTI · 1849514

Experimental Study of Acceptor Removal in UFSD

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Abstract

The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. In this study, the effect is tested both with capacitance–voltage, C–V, measurements of the doping concentration and with measurements of charge collection, CC, using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C–V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.

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73 NUCLEAR PHYSICS AND RADIATION PHYSICS acceptor removal correlation C-V and charge collection instruments & instrumentation low-gain avalanche detectors nuclear science & technology physics radiation damage ultra-fast silicon detectors

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Jin, Y., Ren, H., Christie, S., Galloway, Z., Gee, C., Labitan, C., Lockerby, M., Martinez-McKinney, F., Mazza, S. M., Padilla, R., Sadrozinski, H. F. -W., Schumm, B., Seiden, A., Wilder, M., Wyatt, W., Zhao, Y., Arcidiacono, R., Cartiglia, N., Ferrero, M., Mandurrino, M., Siviero, F., Sola, V., Tornago, M., Cindro, V., Howard, A., Kramberger, G., Mandić, I., Mikuž, M.. 2020-09-07. Experimental Study of Acceptor Removal in UFSD. https://doi.org/10.1016/j.nima.2020.164611

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