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Gammer, C.

Publications and source records attributed to Gammer, C..

8 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Atomic Resolution Probing of Phase Transformations and Domain Evolution During Large Superelastic Deformation in Ferroelectrics with in situ TEM

Intrinsically brittle Ferroelectrics have attractive applications such as flexible/wearable electronic devices and mechanically-written high-density memory that depend on both functional and mechanical performance. One potential way to mitigate their brittle behavior is through large superelastic deformation stemming from strain-driven phase transformations and domain evolution. Therefore, in this work, we investigated free-standing single-crystal BaTiO 3 and Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 sub-micrometer pillars during large superelastic deformation, directly observing the stress-induced phase transformations and domain evolution by using in situ Scanning Transmission Electron Microscope (STEM). We found ultra-small and multiple-phase coexistence with sizes down to a few unit cells, and we were able to study them at atomic resolution while under load. Notably, extremely small phase transformation structures and domain structures are often introduced during the large superelastic deformations since the stress field is not screened in ferroelectrics, as compared to the situation with electrical field or thermal cycling.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Multiscale analysis of nanoindentation-induced defect structures in gum metal

Using ex-situ transmission electron microscopy and the recently developed nanoprobe diffraction (NPD) technique, we characterize a nanoindented solution treated gum metal. Lattice rotations are resolved at a 1.2 nm length-scale and shown to be continuous within the nanoindentation pit; further, it is revealed that these can be accommodated by a reasonable number of geometrically necessary dislocations at a density of ~10 15 /m 2 . We furthermore provide direct evidence that dislocations within the nanoindent, rather than secondary phase nanoparticles, can serve as potent barriers to dislocation motion. We also demonstrate that plasticity in these alloys under nanoindentation can be accommodated solely by dislocation nucleation and propagation, with no competing deformation mechanisms present. Conventional transmission electron microscopy and “ g•b ” analysis reveal the presence of dislocations on &lang;$ \bar{1}11 $&rang;{110} slip systems and highly localized plastic deformation in the form of shear bands on <111>{$ \bar{1} \bar{1}2 $} slip systems, similar to previously observed “giant faults”.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Influence of the Ag concentration on the medium-range order in a CuZrAlAg bulk metallic glass

Fluctuation electron microscopy of bulk metallic glasses of CuZrAl(Ag) demonstrates that medium-range order is sensitive to minor compositional changes. Furthermore, by analyzing nanodiffraction patterns medium-range order is detected with crystal-like motifs based on the B2 CuZr structure and its distorted structures resembling the martensitic ones. This result thus demonstrates some structural homology between the metallic glass and its high temperature crystalline phase. The amount of medium-range order seems slightly affected with increasing Ag concentration (0, 2, 5 at.%) but the structural motifs of the medium-range ordered clusters become more diverse at the highest Ag concentration. The decrease of dominant clusters is consistent with the destabilization of the B2 structure measured by calorimetry and accounts for the increased glass-forming ability.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Local and transient nanoscale strain mapping during in situ deformation

The mobility of defects such as dislocations controls the mechanical properties of metals. This mobility is determined both by the characteristics of the defect and the material, as well as the local stress and strain applied to the defect. Therefore, the knowledge of the stress and strain during deformation at the scale of defects is important for understanding fundamental deformation mechanisms. In this paper, we demonstrate a method of measuring local stresses and strains during continuous in situ deformation with a resolution of a few nanometers using nanodiffraction strain mapping. Finally, our results demonstrate how large multidimensional data sets captured with high speed electron detectors can be analyzed in multiple ways after an in situ TEM experiment, opening the door for true multimodal analysis from a single electron scattering experiment.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films

Domains and domain walls are critical in determining the response of ferroelectrics, and the ability to controllably create, annihilate, or move domains is essential to enable a range of next-generation devices. Whereas electric-field control has been demonstrated for ferroelectric 180° domain walls, similar control of ferroelastic domains has not been achieved. Here, using controlled composition and strain gradients, we demonstrate deterministic control of ferroelastic domains that are rendered highly mobile in a controlled and reversible manner. Through a combination of thin-film growth, transmission-electron-microscopy-based nanobeam diffraction and nanoscale band-excitation switching spectroscopy, we show that strain gradients in compositionally graded PbZr 1-x Ti x O 3 heterostructures stabilize needle-like ferroelastic domains that terminate inside the film. These needle-like domains are highly labile in the out-of-plane direction under applied electric fields, producing a locally enhanced piezoresponse. This work demonstrates the efficacy of novel modes of epitaxy in providing new modalities of domain engineering and potential for as-yet-unrealized nanoscale functional devices.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Strain mapping at nanometer resolution using advanced nano-beam electron diffraction

In this work, we report on the development of a nanometer scale strain mapping technique by means of scanning nano-beam electron diffraction. Only recently possible due to fast acquisition with a direct electron detector, this technique allows for strain mapping with a high precision of 0.1% at a lateral resolution of 1 nm for a large field of view reaching up to 1 μm. We demonstrate its application to a technologically relevant strain-engineered GaAs/GaAsP hetero-structure and show that the method can even be applied to highly defected regions with substantial changes in local crystal orientation. Strain maps derived from atomically resolved scanning transmission electron microscopy images were used to validate the accuracy, precision and resolution of this versatile technique.

36 MATERIALS SCIENCE↗