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DOE OSTI · 1773706

Strain mapping at nanometer resolution using advanced nano-beam electron diffraction

Ozdol, V. B.·Gammer, C.·Jin, X. G.·Ercius, P.·Ophus, C.·Ciston, J.·Minor, A. M.
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Abstract

In this work, we report on the development of a nanometer scale strain mapping technique by means of scanning nano-beam electron diffraction. Only recently possible due to fast acquisition with a direct electron detector, this technique allows for strain mapping with a high precision of 0.1% at a lateral resolution of 1 nm for a large field of view reaching up to 1 μm. We demonstrate its application to a technologically relevant strain-engineered GaAs/GaAsP hetero-structure and show that the method can even be applied to highly defected regions with substantial changes in local crystal orientation. Strain maps derived from atomically resolved scanning transmission electron microscopy images were used to validate the accuracy, precision and resolution of this versatile technique.

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36 MATERIALS SCIENCEOptical devicescharge coupled devicescrystal orientationdark field electron holographyelectron diffractionlensesphotocathodesquantum wellssemiconductor devicestransmission electron microscopy

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Ozdol, V. B., Gammer, C., Jin, X. G., Ercius, P., Ophus, C., Ciston, J., Minor, A. M.. 2015-06-24. Strain mapping at nanometer resolution using advanced nano-beam electron diffraction. https://doi.org/10.1063/1.4922994

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36 MATERIALS SCIENCE↗