Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments
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Qingyun Xie↗
Engineering topics
Gary W. Hunter
Publications and source records attributed to Gary W. Hunter.
A 96% Alumina based Packaging System for 500°C Test of SiC Integrated Circuits
With the development of silicon carbide (SiC) sensors and electronic devices for operation at 500°C, compatible packaging technologies are needed for long term high temperature test and deployment of these sensors and electronic devices. 96% Al2O3 ceramic is an excellent electrically insulating material with acceptable dielectric constant and low dielectric loss over wide temperature and frequency ranges. This paper presents a packaging system for low power integrated circuits including a prototype 8-I/O chip-level package and printed circuit board (PCB) based on 96% Al2O3 ceramic substrates and Au thick-film metallization for 500°C applications. The details related to designs of packages and PCBs, packaging materials, and specific packaging step recipes including wire - bonding and die-attach, are presented. Some test results of this prototype packaging approach applied to SiC integrated circuits at 500oC are reviewed.
high temperature↗
Pt/HTCC Alumina based Electronic Packaging System and Integration Processes for High Temperature Harsh Environment Applications
Electronic devices capable of operation at 500°C are required for long term Venus surface missions, as well as for in situ monitoring and control of next generation aeronautical engines. High temperature sensors and electronics can also find many applications in military, and energy and automobile industries. Various silicon carbide (SiC) sensors and electronic devices have been developed for operation at 500 °C, and a compatible packaging system is needed for long term test and deployment of these high temperature devices. High temperature co-fired ceramics (HTCC) alumina with platinum (Pt) conductor was proposed for high temperature electronic packaging. A prototype Pt/HTCC alumina packaging system including chip-level package and circuit board has been briefly reported previously for long-term electrical testing of SiC integrated circuits at 500 °C, and brief testing at much higher temperatures. HTCC alumina is an excellent dielectric material with acceptable dielectric constant and low dielectric loss over wide temperature and frequency ranges. Pt is chemically noble and can be co-fired with HTCC alumina in air ambient producing a viable electronic packaging material system for high temperature applications. This paper presents a more detailed description of this packaging system including prototype low power packages and circuit boards based on HTCC alumina and Pt metallization for 500°C and other harsh environment applications. The key technical considerations for chip-level packaging and circuit board assembly, including materials and processes for 500 °C durable wire-bonding and SiC die attach, and integration of multi-chip circuit boards, are presented. Experimental test results of this packaging approach applied to SiC integrated circuits at 500 °C and 700°C are discussed as well.
High temperature↗
Pt/HTCC Alumina based Electronic Packaging System and Integration Processes for High Temperature Harsh Environment Applications
Electronic devices capable of operation at 500°C are required for long term Venus surface missions, as well as for in situ monitoring and control of next generation aeronautical engines. High temperature sensors and electronics can also find many applications in military, and energy and automobile industries. Various silicon carbide (SiC) sensors and electronic devices have been developed for operation at 500 °C, and a compatible packaging system is needed for long term test and deployment of these high temperature devices. High temperature co-fired ceramics (HTCC) alumina with platinum (Pt) conductor was proposed for high temperature electronic packaging. A prototype Pt/HTCC alumina packaging system including chip-level package and circuit board has been briefly reported previously for long-term electrical testing of SiC integrated circuits at 500 °C, and brief testing at much higher temperatures. HTCC alumina is an excellent dielectric material with acceptable dielectric constant and low dielectric loss over wide temperature and frequency ranges. Pt is chemically noble and can be co-fired with HTCC alumina in air ambient producing a viable electronic packaging material system for high temperature applications. This paper presents a more detailed description of this packaging system including prototype low power packages and circuit boards based on HTCC alumina and Pt metallization for 500°C and other harsh environment applications. The key technical considerations for chip-level packaging and circuit board assembly, including materials and processes for 500 °C durable wire-bonding and SiC die attach, and integration of multi-chip circuit boards, are presented. Experimental test results of this packaging approach applied to SiC integrated circuits at 500 °C and 700°C are discussed as well.
electronic packaging↗
A Brief Overview of Relevant Silicon Carbide Electronics and Sensor Development for Long Duration Venus Surface Exploration
This presentation concentrates on the potential of long duration Venus surface missions, and the role of Silicon Carbide (SiC) electronics and sensor advancements in such exploration. For example, SiC integrated circuit (IC) electronics have matured to a state where a simple long-life scientific probe is feasible for extended Venus surface operations. These electronics have been demonstrated for more than a year at 500˚C, and 60 days in high-fidelity simulated Venus surface conditions [1-2]. Further, high temperature chemical sensing technology, including SiC-based gas sensors, integrated with SiC electronics can enable future exploration of the Venus surface atmosphere [3]. Continued maturation of these high temperature electronics and sensors has been part of the Long-Lived In-Situ Solar System Explorer (LLISSE) project to provide an operational system for in situ exploration of the Venus surface up to 60 days [4]. A key focus of this work includes increasing the complexity and decreasing the power consumption of the ICs which will pave the way to enhanced capabilities, such as long-duration Venus seismic measurements and other mission capabilities currently under development. This is in parallel to work expanding the capabilities of the sensor technology to provide science measurements on the Venus surface. This presentation will give an overview of possible extended duration Venus surface exploration and some of the SiC-based technologies that can enable this exploration.
high temperature Venus surface electronics sensors↗
Harsh Environment and Remote Technology Overview for the 2023 SMD Technology Showcase
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high temperature↗
A Brief Status Update on Venus Long Lived Lander Technologies
The extreme surface conditions of Venus, including high temperature/pressure and reactive chemistry, have previously limited the lifetime of surface missions to ~2 hours. However, recent advances in high temperature technologies suggest the possibility of extended duration missions on the Venus surface. This presentation gives a brief overview on a range of high temperature technologies to enable a possible extended duration Venus surface mission. This presentation highlights the technology development under the Long-Lived In Situ Solar System Explorer (LLISSE) project and related technologies. The LLISSE project aimed towards developing a full lander system operational for 60 days on the Venus surface and included a power source, electronics, communications, sensors, and the structure, each at a different level of maturity. This presentation briefly describes these and other lander system technologies, their relative level of maturity, and planned future development for Venus surface exploration.
Venus surface exploration high temperature technol↗
Smart Sensors and Electronics Systems Branch Overview –Technology Relevance to Additive Manufacturing
A brief overview is given on a range of Smart Sensor Technologies, esp. high temperature technologies. These technologies have relevance to improved intelligent systems and additive manufacturing processing.
Smart Sensor Additive Manufacturing↗
800 °C Demonstrated kHz SiC IC Electronics and Pressure Sensors as Technical Foundation for Realizing MHz DARPA HOTS Goals
The HOTS program will develop a technology for high-bandwidth, high-dynamic-range sensing at high temperature. Performance will be validated through the development and demonstration of a pressure sensor module (i.e., integrated transducer and signal-conditioning microelectronics) achieving the following performance goals: NASA Glenn has unique technology experience in extreme environment pressure sensors & IC electronics, including at 800 °C in air, providing significant risk reduction in meeting DARPA HOTS goals. Appropriate partnership and tech transfer should accelerate realization of DARPA HOTS hard technical challenges.
SiC pressure sensor electronics high temperature↗
An Overview of Long-Lived Venus Lander Technologies
The extreme surface conditions of Venus, including high temperature/pressure and reactive chemistry, have previously limited the lifetime of surface missions to ~2 hours. However, recent advances in high temperature technologies suggest the possibility of extended duration missions on the Venus surface. This presentation gives a brief overview on a range of high temperature technologies to enable a possible extended duration Venus surface mission, as well as an overview of the motivation and challenges of Venus surface exploration. The technology development under the Long-Lived In Situ Solar System Explorer (LLISSE) project and related technologies will be emphasized. The LLISSE project aimed towards developing a full lander system operational for 60 days on the Venus surface and included a power source, electronics, communications, sensors, and the structure, each at a different level of maturity. This presentation briefly describes these and other lander system technologies, their relative level of maturity, and planned future development for Venus surface exploration.
Venus surface exploration high temperature technol↗
A Brief Overview of High Temperature Technologies for a Venus Long Lived Lander
The extreme surface conditions of Venus, including high temperature/pressure and reactive chemistry, have previously limited the lifetime of surface missions to ~2 hours. However, recent advances in high temperature technologies suggest the possibility of extended duration missions on the Venus surface. This presentation gives a brief overview on a range of high temperature technologies to enable a possible extended duration Venus surface mission. The technology development under the Long-Lived In Situ Solar System Explorer (LLISSE) project and related technologies will be emphasized as well as that in the High Operating Temperature Technologies (HOTTech) program. The LLISSE project aimed towards developing a full lander system operational for 60 days on the Venus surface and included a power source, electronics, communications, sensors, and the structure, each at a different level of maturity. This presentation briefly describes these and other lander system technologies, their relative level of maturity, and planned future development for Venus surface exploration. It also describes the relevant capabilities and development approach to enable such a mission at NASA Glenn Research Center.
Venus surface↗
Considerations for Sensors Technology Development and Implementation
A brief overview is given on some of the approaches and challenges in sensor technology development and application. Examples of sensors systems that have been developed and demonstrated in applications, as well as a description of the CAS project.
Smart Sensor Additive Manufacturing↗