Interface Trap State Analysis of Gate Dielectrics on Gallium Nitride and Silicon Carbide using a Novel Quasi-Static CV Technique.
Abstract not provided.
Rummel, Brian↗
Engineering topics
Glaser, Caleb
Publications and source records attributed to Glaser, Caleb.
Interface Trap State Analysis of Gate Dielectrics on Gallium Nitride and Silicon Carbide using a Novel Quasi-Static CV Technique.
Abstract not provided.
Rummel, Brian↗
Interface Trap Density Characterization of ALD Gate Dielectrics for GaN Power MOSFETs.
Abstract not provided.
Glaser, Caleb↗
Progress in Fabrication and Characterization of Vertical GaN Power Devices (invited).
Abstract not provided.
Kaplar, Robert↗
Development of Vertical GaN Power Devices for Use in Electric Vehicle Drivetrains (invited).
Abstract not provided.
Kaplar, Robert↗
Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes.
Abstract not provided.
Binder, Andrew↗
Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes.
Abstract not provided.
Binder, Andrew↗