Interface Trap Density Characterization of ALD Gate Dielectrics for GaN Power MOSFETs.

Glaser, Caleb; Rummel, Brian; Binder, Andrew; Yates, Luke; Allerman, Andrew; Feezell, Daniel; Kaplar, Robert

doi:10.2172/2003786

DOE OSTI · 2003786

Interface Trap Density Characterization of ALD Gate Dielectrics for GaN Power MOSFETs.

Glaser, Caleb·Rummel, Brian·Binder, Andrew·Yates, Luke·Allerman, Andrew·Feezell, Daniel·Kaplar, Robert

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Glaser, Caleb, Rummel, Brian, Binder, Andrew, Yates, Luke, Allerman, Andrew, Feezell, Daniel, Kaplar, Robert. 2022-06-01. Interface Trap Density Characterization of ALD Gate Dielectrics for GaN Power MOSFETs.. https://doi.org/10.2172/2003786

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