Engineering topics

Guiling, David

Publications and source records attributed to Guiling, David.

2 records

DOE OSTI2021

Demonstration of Passivation Using a Low-Temperature-Grown, Al-Containing Window Layer by HVPE

We present hydride vapor phase epitaxy (HVPE) growth of single junction GaAs solar cells with Al0.4Ga0.6As front passivation layers at a growth temperature of 650°C. Devices achieved a short circuit current density of ~27.52 mA/cm2 after anti-reflection coating, similar to devices that used GaInP windows with the same bandgap, indicating that AlGaAs provides front-surface passivation resulting in a low interface recombination velocity. The low temperature growth of Al containing III-V materials by HVPE allows for compatibility with In-containing alloys in high-efficiency III-V device structures for various applications.

41 EE - Solar Energy Technologies Office (EE-4S)↗

DOE OSTI2019

Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

In this work, we demonstrate hydride vapor phase epitaxy (HVPE) of Al x Ga 1-x As, Al x In 1-x P, and Al x Ga y In 1-x-y P using an AlCl 3 precursor. We study the growth of the Al x Ga 1-x As alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl 3 . Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of Al x Ga 1-x As, and for the first time by HVPE, Al x In 1-x P and Al x Ga y In 1-x-y P. Finally, these results create exciting implications for HVPE-grown high-efficiency III-V solar cells and devices with reduced cost.

14 SOLAR ENERGY↗