Demonstration of Passivation Using a Low-Temperature-Grown, Al-Containing Window Layer by HVPE

Metaferia, Wondwosen (ORCID:000000031581830X); Schulte, Kevin L. (ORCID:0000000342736254); Simon, John (ORCID:0000000329873641); Guiling, David; Ptak, Aaron J. (ORCID:0000000309978964)

doi:10.1109/pvsc45281.2020.9300791

DOE OSTI · 1768298

Demonstration of Passivation Using a Low-Temperature-Grown, Al-Containing Window Layer by HVPE

Metaferia, Wondwosen (ORCID:000000031581830X)·Schulte, Kevin L. (ORCID:0000000342736254)·Simon, John (ORCID:0000000329873641)·Guiling, David·Ptak, Aaron J. (ORCID:0000000309978964)

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Abstract

We present hydride vapor phase epitaxy (HVPE) growth of single junction GaAs solar cells with Al0.4Ga0.6As front passivation layers at a growth temperature of 650°C. Devices achieved a short circuit current density of ~27.52 mA/cm2 after anti-reflection coating, similar to devices that used GaInP windows with the same bandgap, indicating that AlGaAs provides front-surface passivation resulting in a low interface recombination velocity. The low temperature growth of Al containing III-V materials by HVPE allows for compatibility with In-containing alloys in high-efficiency III-V device structures for various applications.

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Metaferia, Wondwosen (ORCID:000000031581830X), Schulte, Kevin L. (ORCID:0000000342736254), Simon, John (ORCID:0000000329873641), Guiling, David, Ptak, Aaron J. (ORCID:0000000309978964). 2021-01-05. Demonstration of Passivation Using a Low-Temperature-Grown, Al-Containing Window Layer by HVPE. https://doi.org/10.1109/pvsc45281.2020.9300791

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