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In this work we present solar cells grown via hydride vapor phase epitaxy (HVPE) in NREL's dynamic HVPE reactor. We show single junction GaAs and GaInP solar cells with efficiencies as high as 25.5% and 15.2% respectively, and dual junction solar cells with an efficiency of 24.9%.
We present the first AlInP-passivated solar cells grown by dynamic hydride vapor phase epitaxy (D-HVPE). Single junction (1J) GaAs and GaInP/GaAs (2J) tandems with AlInP passivation achieve AM1.5G efficiencies of 26.0% and 28.5%, respectively, which are the highest reported efficiencies for HVPE-grown devices of each type. 1J devices passivated with either AlInP or GaInP exhibit similar VOC and long wavelength current collection, indicating that both windows provide similar passivation. Adding AlInP passivation to the 2J solar cell improves the VOC by -50 mV relative to the device passivated by a GaInP emitter. These achievements remove one of the last barriers limiting parity of HVPE device efficiencies with state-of-the-art.
We present hydride vapor phase epitaxy (HVPE) growth of single junction GaAs solar cells with Al0.4Ga0.6As front passivation layers at a growth temperature of 650°C. Devices achieved a short circuit current density of ~27.52 mA/cm2 after anti-reflection coating, similar to devices that used GaInP windows with the same bandgap, indicating that AlGaAs provides front-surface passivation resulting in a low interface recombination velocity. The low temperature growth of Al containing III-V materials by HVPE allows for compatibility with In-containing alloys in high-efficiency III-V device structures for various applications.
GaInP top cell current-density presently limits the performance of HVPE-grown two-junction devices, in large part due to unwanted dopant diffusion. Here, we institute mitigation strategies to lower the diffusion of dopants from both the front contact and back surface field. Successful application of these strategies resulted in a short-circuit current density of 12.1 mA/cm 2 in a GaInP/GaAs cell, an improvement of 0.9 mA/cm2 over our previous best cell. The reduced Se diffusion results in a thinner unpassivated emitter, which can lead to higher series resistance. Despite the increased resistance we obtained an efficiency increase from 23.7% to 24.8%.
Dynamic hydride vapor phase epitaxy (D-HVPE) has provided a potential route towards lower cost material growth of III-V photovoltaic devices. A highly doped Ga0.5In0.5P emitter layer is grown in attempt to force passivation at the front of the cell to account for the absence of a suitable window layer in our reactor. Control over dopant diffusion in these materials is thus critical to achieving high-efficiency device performance. Here, we institute a two-step contact layer design that boosts tandem cell efficiencies by minimizing Se diffusion into the underlying emitter layer while still providing sufficiently low contact resistance. Short-circuit current in these devices improves to 8.9 mA/cm2 in an uncoated GaInP/GaAs cell, an improvement of 1.2 mA/cm2 over our previous best cell. Conversion efficiency with the new contact doping scheme is projected to be ~27% with the inclusion of a standard ARC layer.
This poster describes the benefits of low-cost high-efficiency solar cells to US military.
Abstract not provided.
The recent development of hydride vapor phase epitaxy (HVPE) is potentially promising as a route to lower the cost of high-efficiency III-V solar cells for space applications. HVPE produces the same materials and device structures as the industry-standard organometallic vapor phase epitaxy (OMVPE) process, and although HVPE has shown promising device efficiencies, it lags the OMVPE growth technique in technical maturity. For example, there are no reports of the performance of HVPE-grown devices in radiation environments. There is an expectation that high-quality (that is, single crystal and low-defect) III-V materials will behave similarly regardless of the growth method. However, it is important to verify assumptions as facts. In this project, we produced materials and devices using both HVPE and OMVPE at NREL and irradiated them using 1 MeV electrons to ascertain the effect of radiation on the materials. We also performed initial work on producing more radiation-hard structures, including devices with the pn junction at the front of the device, and devices with a graded doping profile, both of which help with radiation tolerance. Measurements of the devices post radiation exposure showed that the open-circuit voltage (V OC ) of the HVPE-grown solar cells degraded least on a percent basis, although they also started from a lower baseline than the OMVPE-grown devices. All solar cells reached approximately the same V OC after irradiation, indicating that the dose used was sufficient to degrade all device equally. The short-circuit current in the HVPE devices did degrade more than the other solar cells, and this was attributed to a higher-than-expected doping density in the base layer of that cell. The results of these experiments, while by no means comprehensive, do not show any material difference in the radiation effects in OMVPE- and HVPE-grown materials and devices.
We demonstrate the uniqueness of Dynamic Hydride Vapor Phase Epitaxy (D-HVPE) to deposit III-V materials for high efficiency and potentially low-cost photovoltaics applications. Unlike traditional HVPE, D-HVPE allows for the deposition of relatively complex heterostructures and devices at high growth rates. We recently achieved record growth rates > 500 µm/h for GaAs and >200 µm/h for GaInP in our D-HVPE, and have not yet reached a growth rate limit for either material. We grew single junction GaAs solar cells at growth rates up to 309 µm/h without significant degradation of solar cell performance. We also demonstrate growth of Al-containing III-V materials in HVPE, a capability that makes D-HVPE more attractive for applications beyond photovoltaics.
Wafer reuse techniques help offset the cost of III-V growth substrates by using a single wafer for multiple growths, but costly re-polishing after device removal limits the end benefit. In this work, we present planarization growth by hydride vapor-phase epitaxy (HVPE), a potentially low-cost growth technique, as a method of smoothing rough substrates for subsequent high-quality device growth without the need for polishing. First, we show there is a threshold for allowable substrate roughness without device degradation by comparing devices grown by organometallic vapor-phase epitaxy (OMVPE) on epi-ready polished and pre-polished substrates that did not have the final epi-ready polish. We then demonstrate successful smoothing with HVPE growth on substrates with different surface morphologies, with features ranging from general roughness to large facets. Initial devices grown by HVPE on a pre-polished substate showed no degradation compared to a control wafer, indicating that planarizing rough substrates through HVPE growth is a promising path toward being able to use rough substrates directly for growth, without costly polishing steps.
A 24%-efficient single-junction GaAs solar cell grown directly on a faceted, spalled (100) GaAs substrate after in situ planarization growth by hydride vapor phase epitaxy (HVPE) is achieved. Controlled spalling, a promising low-cost substrate reuse technique, produces large facets in (100)-oriented GaAs substrates due to the orientation of the fracture planes used for lift-off. Planarization by HVPE offers a path toward direct use of these spalled substrates without costly polishing steps. In this report the growth rate anisotropy enabling planarization arising from diffusion and differences in the adsorption of growth species on {n11}B-type facets relative to (100) is determined. Consecutive planarization and device growth that results in a solar cell with a minimal performance difference relative to a control cell grown on an epitaxy-ready substrate are demonstrated. These results show that controlled spalling coupled with HVPE planarization is a viable pathway for lowering the cost of III-V photovoltaics.
We present an inverted metamorphic rear heterojunction ~1.0 eV GaInAs solar cell deposited by dynamic hydride vapor phase epitaxy (D-HVPE) with high growth rate. This device uses a Ga 1-x In x P compositionally graded buffer (CGB) to bridge the lattice constant gap between the GaAs substrate and the Ga0.71In0.29As emitter layer. High-resolution x-ray diffraction and transmission electron microscopy confirm that the Ga 0.71 In 0.29 As emitter is grown lattice-matched to the in-plane lattice constant of the CGB with minimal generation of defects at the GaInAs/GaInP interface. The device contains a threading dislocation density of 2.3 × 10 6 cm -2 , a level that enables high-performance minority carrier devices and is comparable to previously demonstrated GaInP CGBs grown by D-HVPE. The device exhibits an open-circuit voltage of 0.589 V under a one-sun AM1.5G illumination condition and a bandgap-voltage offset of 0.407 V, indicating metamorphic epitaxial performance nearly equal to state-of-the-art devices. We analyze the dark current of the device and determine that reducing recombination in the depletion region, which can be achieved by reducing the threading dislocation density and optimizing the device doping density, will improve the device performance. Furthermore, the CGB and device layers, comprising ~8 µm of thickness, are grown in under 10 min, highlighting the ability of D-HVPE to produce high-quality metamorphic devices of all types with the potential for dramatically higher throughput compared to present technology.
Here, we describe a fully in situ method of fabricating light-scattering structures on III-V materials that generates a rough morphology via vapor phase etching and redeposition. Fully in situ methods support higher industrial throughput by utilizing the growth reactor to generate the light-trapping structures after device growth without removal from the reactor. We use HCl and PH 3 to etch and redeposit scattering morphologies on Ga 0.5 In 0.5 P in a dynamic hydride vapor phase epitaxy (D-HVPE) reactor. We show that the addition of PH 3 leads to redeposition during the vapor phase HCl etching of Ga 0.5 In 0.5 P and that HCl flow rate and time exposed to HCl-PH 3 each independently cause a linear increase in the redeposited feature size, indicating that redeposition proceeds by island growth in a III-Cl-limited, hydride-enhanced HVPE regime. Auger electron spectroscopy and scanning transmission electron microscopy with energy dispersive spectroscopy (STEM-EDS) reveal redeposition to be highly Ga-rich GaInP, i.e., Ga(In)P. The Ga-rich nature of the redeposition results from the higher thermodynamic driving force for Ga incorporation than for In during HVPE growth and the difference in the volatility of the III-Cl etch products. The resulting morphologies have high broadband scattering, as determined by normal specular reflectance and integrating sphere measurements, indicating effectiveness as light-scattering structures. In a 270-nm-thick GaAs photovoltaic device with a textured back surface, we achieve a 4.9% increase in short circuit current density (J SC ) without any loss in open-circuit voltage (V OC ) relative to a planar control using only a 60 s in situ texturing treatment.
Hexagonal boron nitride ( h ‐BN), with its ultrawide bandgap and 2D structure, holds an immense promise for advanced semiconductor applications. Scaling bulk crystals to large‐diameter wafers, crucial for complex device fabrication, remains a challenge with high temperature, high pressure, and metal flux solution methods. To address this, recent efforts have focused on hydride vapor‐phase epitaxy (HVPE) for producing large diameter thick h ‐BN quasi‐bulk wafers, reaching hundreds of micrometers. These HVPE‐grown quasi‐bulk crystals exhibit excellent c ‐axis long‐range order. Notably, the in‐plane mobility‐lifetime products for both electrons and holes surpass 10 −4 cm 2 V −1 , which are two orders of magnitude greater than the out‐of‐plane (vertical) values, highlighting the potential for high‐performance devices leveraging superior lateral transport. Lateral detectors fabricated from 100 μm thick B‐10 enriched h‐ BN wafers have achieved a record 60% thermal neutron detection efficiency. Based on its physical properties, h‐ BN appears to be an outstanding material of choice for light‐triggered electronic power switches capable of supporting high ‐ voltage and high ‐ power operations. These recent advancements in large‐diameter h ‐BN quasi‐bulk crystal growth, enabled by HVPE, pave the way for applications spanning deep UV photonics, high‐power electronics, high‐efficiency neutron detection, and quantum information technologies, establishing h ‐BN as both a versatile active semiconductor and an ideal substrate.
We report a systematic study of CuPt-type ordering in hydride vapor phase epitaxy (HVPE)-grown Ga 0.5 In 0.5 P. Selected-area electron diffraction reveals ordering in samples grown on (001) GaAs substrates offcut toward (1$\overline{1}$1)B. The ordering is single-variant, occurring only on (1$\overline{1}$1)B planes and not on ($\overline{1}$11)B. Quantitative analysis of the order parameter by high-resolution x-ray diffraction (HRXRD) indicates that ordering increases with deposition temperature in samples grown at 600–700 °C with a constant gas-phase V/III ratio ~3. Ordering increases with V/III ratio in the range of 1.3–6.7 at a constant deposition temperature of 650°C. Photoluminescence measurements correlate the order parameter with Ga0.5In0.5P bandgap contraction, though the contraction is larger than expected based on the magnitude of order parameters measured by HRXRD. A possible reason for this discrepancy is that the photoluminescence emission occurs in the lower bandgap ordered domains, which are small and evenly dispersed throughout the material. We also show that the degree of ordering decreases with growth rate, disappearing at ~60 µm/h. The HVPE-grown material exhibits a generally weaker ordering than organometallic vapor phase epitaxy (OMVPE)-grown material, likely due to the moderate V/III ratios employed, in contrast to the V/III ratios in the 100s typical of OMVPE. However, the tendency for ordering to increase with V/III ratio suggests that the same dimer-induced stress mechanism used to explain the occurrence of ordering in OMVPE-grown material also applies to HVPE. The tendencies for ordering to increase with deposition temperature and decrease with growth rate show that kinetics limit the degree of ordering, also in agreement with OMVPE trends.
Hydride vapor phase epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cells for space and terrestrial applications. However, recent demonstrations of ultrafast growth rates (~500 µm/h) via uncracked hydrides are not well described by present models for the growth. Therefore, it is necessary to understand the kinetics of the growth process and its coupling with transport phenomena, so as to enable fast and uniform epitaxial growth. In this work, we derive a kinetic model using experimental data and integrate it into a computational fluid dynamics simulation of an HVPE growth reactor. We also modify an existing hydride cracking model that we validate against numerical simulations and experimental data. Here, we show that the developed growth model and the improved cracking model are able to reproduce experimental growth measurements of GaAs in an existing HVPE system.
III-V devices are used in countless applications due to their excellent physical properties. They could become more prevalent, especially in area-intensive applications such as solar power, if they can achieve significant cost decreases through increasing scale. The development of high-throughput growth systems can help to achieve this scale, leading to the use of III-V devices in areas where they are not currently economically feasible. Here, we describe a pilot production, pseudo inline HVPE reactor with the potential to greatly increase the throughput of III-V devices. We show computational modeling results that both informed system design and the understanding of the impact of different process parameters on the deposition. We show the throughput possibilities of this reactor with an example solar cell device design but note that this system is agnostic to the device structure and can be used to increase the throughput of lasers, LEDs, transistors, and more III-V devices.
We report the development of AlInP-passivated solar cells grown by dynamic hydride vapor-phase epitaxy (D-HVPE) with AM1.5G efficiencies of 26.0% for single-junction (1J) GaAs cells and 28.0% for GaInP/GaAs (2J) tandems. We compare the device performance of solar cells passivated with AlInP versus control cells passivated with GaInP, which has already enabled near-unity carrier collection in GaAs solar cells. 1J devices passivated with either AlInP or GaInP have an identical open-circuit voltage (V OC ) of 1.06 V and long-wavelength current collection near 95%, indicating that both window materials provide a similar degree of passivation. Adding AlInP passivation to each solar cell structure improves the current collection by 1.3 and 1 mA/cm 2 for the 1J and 2J, respectively. The AlInP also results in a top cell V OC boost of ~40 mV relative to a tandem device passivated only by a thin, highly doped GaInP emitter. Secondary-ion mass spectrometry measurements indicate that although O and Si both incorporate in the AlInP window, they do not appear in the subsequently grown absorber layers and do not impact its ability to passivate the front surface. We expect that these achievements, along with continued optimization, will enable parity of hydride vapor-phase epitaxy (HVPE)-grown device efficiencies with state-of-the-art devices grown by other epitaxial methods in the near future.