Engineering topics

Hannaman, David J.

Publications and source records attributed to Hannaman, David J..

5 records

NASA NTRS1991

Five-Segment Interconnection For Electromigration Tests

Proposed integrated-circuit conductive pattern intended for use in electromigration lifetime testing of interconnection lines of integrated circuits. Designed for collection of statistics on electromigration from smallest possible area. Includes 5 interconnection segments with Kelvin voltage taps, with total of 12 contact pads, and provides for simultaneous measurements on all of segments. Attempts to minimize thermal gradients within each segment and conforms to guidelines on electromigration test structures promulgated by National Institute of Standards and Technology (NIST).

Hannaman, David J.↗

NASA NTRS1991

Cross-Quint-Bridge Resistor

Integrated-circuit conductive test pattern intended to provide data on effects of design widths and design spacings upon actual widths of conductive lines. Provides for electrical measurements both on lines of unknown width and on features having known dimensions. Data from measurements on five bridges used to determine four parameters of mathematical model describing system. In principle, pattern determines effects of width and spacing and interaction between them.

Hannaman, David J.↗

NASA NTRS1991

Flange Correction For Metal-To-Metal Contacts

Improved mathematical model provides correction for flange effect in estimating resistance of square contact between two metal layers from standard four-terminal measurements. Extended version of one developed previously for contact between metal layer and semiconductor layer, wherein flange effect important in semiconductor layer only. Here flange effect in both metal layers significant. Interfacial resistances extracted more accurately.

Lieneweg, Udo↗

NASA NTRS1988

Formula Gives Better Contact-Resistance Values

Lateral currents in contact strips taken into account. Four-terminal test structures added to intergrated circuits to enable measurement of interfacial resistivities of contacts between thin conducting layers. Thin-film model simplified quasi-two-dimensional potential model that accounts adequately for complicated three-dimensional, nonuniform current densitites. Effects of nonuniformity caused by lateral current flow in strips summarized in equivalent resistance Rs and voltage Vs.

Lieneweg, Udo↗

NASA NTRS1987

New flange correction formula applied to interfacial resistance measurements of ohmic contacts to GaAs

A quasi-two-dimensional analytical model is developed to account for vertical and horizontal current flow in and adjacent to a square ohmic contact between a metal and a thin semiconducting strip which is wider than the contact. The model includes side taps to the contact area for voltage probing and relates the 'apparent' interfacial resistivity to the (true) interfacial resistivity, the sheet resistance of the semiconducting layer, the contact size, and the width of the 'flange' around the contact. This relation is checked against numerical simulations. With the help of the model, interfacial resistivities of ohmic contacts to GaAs were extracted and found independent of contact size in the range of 1.5-10 microns.

Lieneweg, Udo↗