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Haugland, E. J.

Publications and source records attributed to Haugland, E. J..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Mixed Carrier Conduction in Modulation-doped Field Effect Transistors

The contribution of more than one carrier to the conductivity in modulation-doped field effect transistors (MODFET) affects the resultant mobility and complicates the characterization of these devices. Mixed conduction arises from the population of several subbands in the two-dimensional electron gas (2DEG), as well as the presence of a parallel path outside the 2DEG. We characterized GaAs/AlGaAs MODFET structures with both delta and continuous doping in the barrier. Based on simultaneous Hall and conductivity analysis we conclude that the parallel conduction is taking place in the AlGaAs barrier, as indicated by the carrier freezeout and activation energy. Thus, simple Hall analysis of these structures may lead to erroneous conclusions, particularly for real-life device structures. The distribution of the 2D electrons between the various confined subbands depends on the doping profile. While for a continuously doped barrier the Shubnikov-de Haas analysis shows superposition of two frequencies for concentrations below 10(exp 12) cm(exp -2), for a delta doped structure the superposition is absent even at 50% larger concentrations. This result is confirmed by self-consistent analysis, which indicates that the concentration of the second subband hardly increases.

Schacham, S. E.↗
NASA NTRS1995

Characterization of the transport properties of channel delta-doped structures by light-modulated Shubnikov-de Haas measurements

The transport properties of channel delta-doped quantum well structures were characterized by conventional Hall effect and light-modulated Shubnikov-de Haas (SdH) effect measurements. The large number of carriers that become available due to the delta-doping of the channel, leads to an apparent degeneracy in the well. As a result of this degeneracy, the carrier mobility remains constant as a function of temperature from 300 K down to 1.4 K. The large amount of impurity scattering, associated with the overlap of the charge carriers and the dopants, resulted in low carrier mobilities and restricted the observation of the oscillatory magneto-resistance used to characterize the two-dimensional electron gas (2DEG) by conventional SdH measurements. By light-modulating the carriers, we were able to observe the SdH oscillation at low magnetic fields, below 1.4 tesla, and derive a value for the quantum scattering time. Our results for the ratio of the transport and quantum scattering times are lower than those previously measured for similar structures using much higher magnetic fields.

Mena, R. A.↗
NASA NTRS1995

Two Carrier Analysis of Persistent Photoconductivity in Modulation-Doped Structures

A simultaneous fit of Hall and conductivity data gives quantitative results on the carrier concentration and mobility in both the quantum well and the parallel conduction channel. In this study this method was applied to reveal several new findings on the effect of persistent photoconductivity (PPC) on free-carrier concentrations and mobilities. The increase in the two-dimensional electron-gas (2DEG) concentration is significantly smaller than the apparent one derived from single carrier analysis of the Hall coefficient. In the two types of structures investigated, delta doped and continuously doped barrier, the apparent concentration almost doubles following illumination, while analysis reveals an increase of about 20% in the 2DEG. The effect of PPC on mobility depends on the structure. For the sample with a continuously doped barrier the mobility in the quantum well more than doubles. This increase is attributed to the effective screening of the ionized donors by the large electron concentration in the barrier. In the delta doped barrier sample the mobility is reduced by almost a factor of 2. This decrease is probably caused by strong coupling between the two wells, as is demonstrated by self-consistent analysis.

Schacham, S. E.↗
NASA NTRS1993

Transport properties of epitaxial lift off films

Transport properties of epitaxially lifted-off (ELO) films were characterized using conductivity, Hall, and Shubnikov-de Haas measurements. A 10-15 percent increase in the 2D electron gas concentration was observed in these films as compared with adjacent conventional samples. We believe this result to be caused by a backgating effect produced by a charge build up at the interface of the ELO film and the quartz substrate. This increase results in a substantial decrease in the quantum lifetime in the ELO samples, by 17-30 percent, but without a degradation in carrier mobility. Under persistent photoconductivity, only one subband was populated in the conventional structure, while in the ELO films the population of the second subband was clearly visible. However, the increase of the second subband concentration with increasing excitation is substantially smaller than anticipated due to screening of the backgating effect.

Mena, R. A.↗
NASA NTRS1993

Room-Temperature Determination of Two-Dimensional Electron Gas Concentration and Mobility in Heterostructures

A technique for determination of room-temperature two-dimensional electron gas (2DEG) concentration and mobility in heterostructures is presented. Using simultaneous fits of the longitudinal and transverse voltages as a function of applied magnetic field, we were able to separate the parameters associated with the 2DEG from those of the parallel layer. Comparison with the Shubnikov-de Haas data derived from measurements at liquid helium temperatures proves that the analysis of the room-temperature data provides an excellent estimate of the 2DEG concentration. In addition we were able to obtain for the first time the room-temperature mobility of the 2DEG, an important parameter to device application. Both results are significantly different from those derived from conventional Hall analysis.

Schacham, S. E.↗
NASA NTRS1992

Enhancement of Shubnikov-de Haas Oscillations by Carrier Modulation

A novel technique for drastically enhancing the Shubnikov-de Haas (SdH) pattern of oscillatory magnetoresistance is presented. The technique is based on measuring the change in the magnetoresistance due to a carrier generated by a modulated light source. The technique also has the important property of selectively increasing the amplitude of the slower oscillations due to carriers in the second subband much more than oscillations generated by the ground subband electrons. Very clear oscillations generated by a carrier concentration well below 5 x 10 exp 10/sq cm were recorded using the technique.

Schacham, S. E.↗
NASA NTRS1992

Intermodulation in the oscillatory magnetoresistance of a two-dimensional electron gas

The oscillatory magnetoresistance wave form of a 2-D electron gas shows multiple structures when two subbands are populated. In addition to high-field oscillations at a frequency equal to the sum of the two frequencies corresponding to the concentrations of the subbands, and to a superposition at intermediate fields, we observed oscillations at the difference frequency at low fields and higher temperatures. The field range at which the frequency difference is observed increases with increasing temperature. The crossover from superposition to frequency difference is accompanied by a beat. Similar beats, whose field location shows identical temperature dependence, can be observed in data obtained by other groups on different structures. The various components of the wave form can be attributed to different phase relations between the diagonal and off-diagonal elements of the conductivity tensor. It is shown how the intermodulation term, when inserted into the extended oscillatory equation, can give rise to all three structures.

Schacham, S. E.↗
NASA NTRS1992

Temperature independent quantum well FET with delta channel doping

A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300-1.4 K. Transistors were RF tested using on-wafer probing and a constant G sub max and F sub max were measured over the temperature range 300-70 K.

Young, P. G.↗
NASA NTRS1992

Intermodulation in the oscillatory magnetoresistance of a two-dimensional electron gas

The oscillatory magnetoresistance wave form of a 2-D electron gas shows multiple structures when two subbands are populated. In addition to high-field oscillations at a frequency equal to the sum of the two frequencies corresponding to the concentrations of the subbands, and to a superposition at intermediate fields, we observed oscillations at the difference frequency at low fields and higher temperatures. The field range at which the frequency difference is observed increases with increasing temperature. The crossover from superposition to frequency difference is accompanied by a beat. Similar beats, whose field location shows identical temperature dependence, can be observed in data obtained by other groups on different structures. The various components of the wave form can be attributed to different phase relations between the diagonal and off-diagonal elements of the conductivity tensor. It is shown how the intermodulation term, when inserted into the extended oscillatory equation, can give rise to all three structures.

Schacham, S. E.↗
NASA NTRS1988

Shubnikov-de Haas measurements of the 2-D electron gas in pseudomorphic In(0.1)Ga(0.9)As grown on GaAs

Shubnikov-de Hass (SdH) measurements performed on a 200 A layer of pseudomorphic In(0.10)Ga(0.90)As grown by MBE on undoped GaAs with an overlayer of Al(0.15)Ga(0.85)As are presented. These measurements were performed in magnetic fields up to 1.4 tesla at T in the range of 1.4-10 K. It was found that only one subband was populated with a density of 5.8 x 10 to the 11/cm-squared and an effective mass at the Fermi level m(asterisk) = (0.060 + or - 0.001)m(0).

Szydlic, P. P.↗
NASA NTRS1986

Compensation in epitaxial cubic SiC films

Hall measurements on four n-type cubic SiC films epitaxially grown by chemical vapor deposition on (100) Si substrates are presented, and the temperature-dependent carrier concentrations are analyzed. Samples are found to be highly compensated (greater than 90 percent) contrary to the assumption made in previously published work, and the donor ionization energies, E(D), are shown to be less than one-half the values quoted previously. New E(D) and donor concentration values, however, provide evidence for identifying the donors as nitrogen in cubic SiC.

Segall, B.↗
NASA NTRS1986

Compensation in epitaxial cubic SiC films

Hall measurements on four n-type cubic SiC films epitaxially grown by chemical vapor deposition on SiC substrates are reported. The temperature dependent carrier concentrations indicate that the samples are highly compensated. Donor ionization energies, E sub D, are less than one half the values previously reported. The values for E sub D and the donor concentration N sub D, combined with results for small bulk platelets with nitrogen donors, suggest the relation E sub D (N sub D) = E sub D(O) - alpha N sub N sup 1/3 for cubic SiC. A curve fit gives alpha is approx 2.6x10/5 meV cm and E sub D (O) approx 48 meV, which is the generally accepted value of E sub D(O) for nitrogen donors in cubic SiC.

Segall, B.↗
NASA NTRS1984

NASA seeking high-power 60-GHz IMPATT diodes

Recent progress in the development of high-power 60 GHz GaAs IMPATT diodes for communication links with high-data-rate satellites is discussed. One of the advantages of GaAs over Si as the material for the diodes are that GaAs is likely to have a higher output and efficiency than Si despite recent advances in Si technology. It is therefore in GaAs technology that research is currently concentrating. Some of the design strategies of the various companies working on the technology are described, including a pill process, MOCVD growth, and the use of diethy zinc as a dopant. Reliability testing of the diodes will be performed by NASA. Some of the alternatives to solid state amplifiers are discussed, including optical and traveling wave tube technology (TWT).

Haugland, E. J.↗
NASA NTRS1984

High efficiency IMPATT diodes for 60 GHz intersatellite link applications

Intersatellite links are expected to play an increasingly important role in future satellite systems. Improved components are required to properly utilize the wide bandwidth allocated for intersatellite link applications around 60 GHz. IMPATT diodes offer the highest potential performance as solid state power sources for a 60 GHz transmitter. Presently available devices do not have the desired power and efficiency. High efficiency, high power IMPATT diodes for intersatellite link applications are being developed by NASA and other government agencies. The development of high efficiency 60 GHz IMPATT diodes by NASA is described.

Haugland, E. J.↗
NASA NTRS1984

High efficiency IMPATT diodes for 60 GHz intersatellite link applications

Intersatellite links are expected to play an increasingly important role in future satellite systems. Improved components are required to properly utilize the wide bandwidth allocated for intersatellite link applications around 60 GHz. IMPATT diodes offer the highest potential performance as solid state power sources for a 60 GHz transmitter. Presently available devices do not have the desired power and efficiency. High efficiency, high power IMPATT diodes for intersatellite link applications are being developed by NASA and other government agencies. This paper describes the development of high efficiency 60 GHz IMPATT diodes by NASA. These programs are cofunded by the U.S. Air Force, Space Division.

Haugland, E. J.↗
NASA NTRS1984

Electronic properties of carbon fibers intercalated with copper chloride

Copper chloride intercalated pitch-based carbon fibers are found to have electrical resistivities as low as 12.9 micro-ohm-cm, and are air- and thermally-stable at and above room temperature. This is therefore a good candidate system for conductor application. In addition, Shubnikov-deHaas quantum oscillatory effects were found, and electronic properties of the intercalated fiber are studied using magnetic fields to 20 tesla.

Oshima, H.↗