NASA NTRS · 19920066972
Temperature independent quantum well FET with delta channel doping
Abstract
A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300-1.4 K. Transistors were RF tested using on-wafer probing and a constant G sub max and F sub max were measured over the temperature range 300-70 K.
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Young, P. G., Mena, R. A., Alterovitz, S. A., Schacham, S. E., Haugland, E. J.. 1992-07-02. Temperature independent quantum well FET with delta channel doping. https://ntrs.nasa.gov/citations/19920066972
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