Engineering topics
Publications and source records attributed to Hauser, J. R..
Heterojunction and graded band gap type solar cells are theoretically investigated. A computer program is developed to account for energy band gap variations and the resulting built-in electric fields which result from heterojunctions and graded energy band gaps. This program is used in studying solar cell operation under various optical irradiation conditions. Results are summarized.
This paper reports on a theoretical study of the limitations on silicon solar-cell efficiency for both n(+)-p and n(+)-p-p(+) type cells. Detailed calculations have been made of solar-cell operation using a general computer analysis program for semiconductor devices. The computer program, which simultaneously solves Poisson's equation and the electron and hole quasi-Fermi level equations, provides an accurate numerical solution of solar-cell operation without limiting assumptions or approximations. It is found that minority-carrier lifetime and heavy doping effects in the n(+) surface region present serious limitations to efficiency in low-resistivity silicon solar cells.
The current-voltage characteristics and efficiencies of solar cells are discussed. For one solar cell structure detailed curves are presented which include carrier densities, current densities, potential, and quasi-Fermi levels at different voltage levels both with and without optically generated carriers (AMO conditions). In addition some results are presented concerning the influence of various parameter variations such as lifetime, cell thickness, and high-low junction width on solar cell performance.
Solid state bulk and semiconductor junction phenomena evaluated for advanced NASA sensors and transducers
Positive space charge buildup produced in silicon dioxide by low energy electrons as function of beam energy and oxide thickness
Radiation damage on semiconductor surfaces and effects on performance
Electronic charge injection instability in silicon nitride metal-insulator-semiconductor devices
Charge storage in silicon dioxide resulting from electron irradiation
Space charge effects resulting from trapping of thermalized irradiation electrons in insulating materials /polyethylene terephthalate/
Charge storage effects in Mylar from electron irradiation
Multiple energy bands effects on stress dependence of breakdown and order of magnitude in breakdown voltage of Ge and Si junction diodes
Theoretical model for effect of mechanical stress on generation-recombination currents in p-n junctions
Effects of mechanical stress on breakdown voltage of p-n junctions