Heyen, F. [Vrije U., Brussels]

DOE OSTI2026

Highly boosted dielectron identification in proton-proton collisions at $\sqrt{s}$ = 13 TeV

A new technique is developed to identify dielectrons (e$^+$e$^-$) with Lorentz boost $γ_\mathrm{L}$$\gt$ 20 that produce one single merged cluster in the electromagnetic calorimeter of the CMS detector. The identification uses two multivariate models: one for the case where both electron tracks are reconstructed, and another where only one of the tracks is reconstructed. The efficiency is determined using proton-proton collision data collected at a center-of-mass energy of 13 TeV. Boosted J/$ψ$ mesons decaying into e$^+$e$^-$ pairs are used to estimate the efficiency of the model with two tracks, yielding an overall efficiency of 80%. The Z $\to$ $μ^+μ^-γ$ events, where the photon converts into a collimated dielectron, are used for the model with a single track, yielding an efficiency of about 60%. A dedicated energy correction for dielectron candidates is also developed using B$^\pm$ $\to$ J/$ψ$K$^\pm$ $\to$ e$^+$e$^-$K$^\pm$ data.

Hayrapetyan, A. [Yerevan Phys. Inst.]↗

DOE OSTI2026

Evaluation of 3D pixel silicon sensors for the CMS Phase-2 Inner Tracker

The high-luminosity upgrade of the CERN LHC requires the replacement of the CMS tracking detector to cope with the increased radiation fluence while maintaining its excellent performance. An extensive R&D program, aiming at using 3D pixel silicon sensors in the innermost barrel layer of the detector, has been carried out by CMS in collaboration with the FBK (Trento, Italy) and CNM (Barcelona, Spain) foundries. The sensors will feature a pixel cell size of 25 × 100 µm 2 , with a centrally located electrode connected to the readout chip. The sensors are read out by the RD53A and CROCv1 chips, developed in 65 nm CMOS technology by the RD53 Collaboration, a joint effort between the ATLAS and CMS groups. This paper reports the results achieved in beam test experiments before and after irradiation, up to a fluence of approximately 2 . 6 × 1 0 16 n eq /cm 2 . Measurements of assemblies irradiated to a fluence of 1 × 10 16 n˙eq/cm 2 show a hit detection efficiency higher than 96% at normal incidence, with fewer than 2% of channels masked, across a bias voltage range greater than 50 V . Even after irradiation to a higher fluence of 1.6 × 10 16 n˙eq/cm 2 , similar performance is maintained over a bias voltage range of 30 V , remaining well within CMS requirements.

3D pixel↗