Search NASASearch

Engineering topics

Ho, F.

Publications and source records attributed to Ho, F..

Status of GaAs/Ge solar cells

With experience at increasing production levels, GaAs/Ge cells are proving their effectiveness for some demanding missions. The experience in producing inactive-Ge structures should benefit parallel work on forming monolithic cascade cells using AlGaAs or GaAs top cell layers grown on Ge or other bottom cell materials. The adjustments needed to ensure that the GaAs/Ge interface is inactive are more likely to preserve the properties of a separately optimized bottom cell.

Iles, P. A.

High efficiency solar cell processing

At the time of writing, cells made by several groups are approaching 19% efficiency. General aspects of the processing required for such cells are discussed. Most processing used for high efficiency cells is derived from space-cell or concentrator cell technology, and recent advances have been obtained from improved techniques rather than from better understanding of the limiting mechanisms. Theory and modeling are fairly well developed, and adequate to guide further asymptotic increases in performance of near conventional cells. There are several competitive cell designs with promise of higher performance ( 20%) but for these designs further improvements are required. The available cell processing technology to fabricate high efficiency cells is examined.

Ho, F.

Recent developments in thin silicon solar cells

Fifty micron thick cells 2x4 sq cm area with coplanar back contacts were made with good yield, and with output equivalent to conventional top/bottom contact cells of the same thickness. A wraparound junction (WAJ) design was selected, and used successfully. The low alpha cells delivered were all above 12%, the average efficiency was 13% and the best was 14%. The overall yield was 35 to 40%, comparable to that for conventional 50 micron cells. The process sequence was moderately complex, but showed good reproducibility. The CBC cells performed wall under several important environmental tests. High alpha CBC cells were made, with about 1% increase in conversion efficiency. The most important design criteria were the choice of back surface N+ and P+ areas.

Ho, F.

Recent advances in thin silicon solar cells

Recent progress in thin (2-4 mils, 50-100 microns) silicon solar cells which extends the capability of the cells into areas of use for possible space missions is reviewed. The production of thin flexible arrays using wrapped-around junction and wrapped-around contact cells is considered. Attention is also given to the formation of cells with very low solar absorptance (alpha-s less than 0.66) through changes in the AR coating, changes in front contact area, and maximizing cell efficiency.

Ho, F.

Development of thin wraparound junction silicon solar cells

The state of the art technologies was applied to fabricate 50 micro thick 2x4 cm, coplanar back contact (CBC) solar cells with AMO efficiency above 12%. A requirement was that the cells have low solar absorptance. A wraparound junction (WAJ) with wraparound metallization was chosen. This WAJ approach avoided the need for very complex fixturing, especially during rotation of the cells for providing adequate contacts over dielectric edge layers. The contact adhesion to silicon was considered better than to an insulator. It is indicated that shunt resistance caused by poor WAJ diode quality, and series resistance from the WAJ contact, give good cell performance. The cells developed reached 14 percent AMO efficiency (at 25 C), with solar absorptance values of 0.73. Space/cell environmental tests were performed on these cells and the thin CSC cells performed well. The optimized design configuration and process sequence were used to make 50 deliverable CBC cells. These cells were all above 12 percent efficiency and had an average efficiency of -13 percent. Results of environmental tests (humidity-temperature, thermal shock, and contact adherence) are also given.

Ho, F.

Diagnostic study of BSF silicon solar cells

Solar cells equipped with back surface fields (BSF) were fabricated by means of an aluminum alloy, boron diffusion, and boron ion implantation. The importance of initial thickness, resistivity, orientation, and the crystal growth method were examined. Aluminum in paste form was screen printed on the cell, followed by alloy formation at 800 C for a minute. Application of the BSFs resulted in open circuit voltage improvements dependent on the substrate resistivity, ranging from 10 mV at 0.3 ohm-cm to 50 mV at 15 ohm-cm. The gains in performance were attributed to a longer penetration depth, a heightened concentration profile at the interface, and higher concentrations in the p+ layer.

Yoo, H.

Thin foil silicon solar cells with coplanar back contacts

To fabricate 50 microns thick, coplanar back contact (CBC) silicon solar cells, wraparound junction design was selected and proved to be effective. The process sequence used, the cell design, and the cell performance are described. CBC cells with low solar absorptance have shown AMO efficiencies to 13%, high cells up to 14%; further improvements are projected with predictable optimization.

Ho, F.