TRL Advancement & Qualification for UV & UV/Vis Photon Counting & Scientific Si Detector Arrays
No abstract provided
Hennessy, John↗
Engineering topics
Hoenk, Michael
Publications and source records attributed to Hoenk, Michael.
Context Cameras for the Orbiting Carbon Observatory 3 (OCO-3) Instrument
We have developed an adaptable camera platform that takes advantage of screened and qualified commercial off the shelf (COTS) components (CMOS sensor, rad-tolerant microcircuits, lenses) to significantly shorten development time of space-borne visible imaging systems while reducing the overall cost and risk of the development. This modular camera platform is implemented as a suite of two visible-light cameras for the Orbiting Carbon Observatory 3 (OCO-3) instrument at NASA’s Jet Propulsion Laboratory (JPL). The Internal Context Camera (ICC) and External Context Camera (ECC) provide contextual engineering imaging support for the calibration of the OCO-3 instrument, intended to significantly reduce the duration of the mission’s calibration campaign. The OCO-3 mission has taken advantage of the design and qualification work performed by JPL’s Mars 2020 Enhanced Engineering Camera (EECam) team in reusing the qualified COTS CMOS imaging sensor, proven electronic designs, and scalable field-programmable gate array (FPGA) firmware to meet OCO-3’s mission requirements and resource availability. We will be presenting the steps taken by JPL to design, build, and test the Context Cameras for the OCO-3 mission. We will highlight the design deviations from the Mars2020 EECams and discuss the methodology of tailoring the EECam design for the OCO-3 requirements. Camera imaging capabilities, including focal plane and optical performance, will be presented, as well as a summary of the calibration and environmental test results. Finally, we will discuss the potential for future applications for the Context Cameras.
Moore, Douglas↗
Subnanosecond Scintillation Detector
A scintillation detector, including a scintillator that emits scintillation; a semiconductor photodetector having a surface area for receiving the scintillation, wherein the surface area has a passivation layer configured to provide a peak quantum efficiency greater than 40% for a first component of the scintillation, and the semiconductor photodetector has built in gain through avalanche multiplication; a coating on the surface area, wherein the coating acts as a bandpass filter that transmits light within a range of wavelengths corresponding to the first component of the scintillation and suppresses transmission of light with wavelengths outside said range of wavelengths; and wherein the surface area, the passivation layer, and the coating are controlled to increase the temporal resolution of the semiconductor photodetector.
Hoenk, Michael↗
The Impact of Radiation Damage on Photon Counting with an EMCCD for the WFIRST-AFTA Coronagraph
WFIRST-AFTA is a 2.4m class NASA observatory designed to address a wide range of science objectives using two complementary scientific payloads. The Wide Field Instrument (WFI) offers Hubble quality imaging over a 0.28 square degree field of view, and will gather NIR statistical data on exoplanets through gravitational microlensing. The second instrument is a high contrast coronagraph that will carry out the direct imaging and spectroscopic analysis of exoplanets, providing a means to probe the structure and composition of planetary systems. The coronagraph instrument is expected to operate in low photon flux for long integration times, meaning all noise sources must be kept to a minimum. In order to satisfy the low noise requirements, the Electron Multiplication (EM)-CCD has been baselined for both the imaging and spectrograph cameras. The EMCCD was selected in comparison with other candidates because of its low effective electronic read noise at sub-electron values with appropriate multiplication gain setting. The presence of other noise sources, however, such as thermal dark signal and Clock Induced Charge (CIC), need to be characterised and mitigated. In addition, operation within a space environment will subject the device to radiation damage that will degrade the Charge Transfer Efficiency (CTE) of the device throughout the mission lifetime. Here we present our latest results from pre- and post-irradiation testing of the e2v CCD201-20 BI EMCCD sensor, baselined for the WFIRST-AFTA coronagraph instrument. A description of the detector technology is presented, alongside considerations for operation within a space environment. The results from a room temperature irradiation are discussed in context with the nominal operating requirements of AFTA-C and future work which entails a cryogenic irradiation of the CCD201-20 is presented.
Peddada, Pavani↗
What's on the Surface? Physics and Chemistry of Delta-Doped Surfaces
Outline of presentation: 1. Detector surfaces and the problem of stability 2. Delta-doped detectors 3. Physics of Delta-doped Silicon 4. Chemistry of the Si-SiO2 Interface 5. Physics and Chemistry of Delta-doped Surfaces a. Compensation b. Inversion c. Quantum exclusion. Conclusions: 1. Quantum confinement of electrons and holes dominates the behavior of delta-doped surfaces. 2. Stability of delta-doped detectors: Delta-layer creates an approx 1 eV tunnel barrier between bulk and surface. 3. At high surface charge densities, Tamm-Shockley states form at the surface. 4. Surface passivation by quantum exclusion: Near-surface delta-layer suppresses T-S trapping of minority carriers. 5. The Si-SiO2 interface compensates the surface 6. For delta-layers at intermediate depth, surface inversion layer forms 7. Density of Si-SiO2 interface charge can be extremely high (>10(exp 14)/sq cm)
detectors↗
Solid-state curved focal plane arrays
The present invention relates to curved focal plane arrays. More specifically, the present invention relates to a system and method for making solid-state curved focal plane arrays from standard and high-purity devices that may be matched to a given optical system. There are two ways to make a curved focal plane arrays starting with the fully fabricated device. One way, is to thin the device and conform it to a curvature. A second way, is to back-illuminate a thick device without making a thinned membrane. The thick device is a special class of devices; for example devices fabricated with high purity silicon. One surface of the device (the non VLSI fabricated surface, also referred to as the back surface) can be polished to form a curved surface.
Nikzad, Shouleh↗
Synthetic Foveal Imaging Technology
Synthetic Foveal imaging Technology (SyFT) is an emerging discipline of image capture and image-data processing that offers the prospect of greatly increased capabilities for real-time processing of large, high-resolution images (including mosaic images) for such purposes as automated recognition and tracking of moving objects of interest. SyFT offers a solution to the image-data processing problem arising from the proposed development of gigapixel mosaic focal-plane image-detector assemblies for very wide field-of-view imaging with high resolution for detecting and tracking sparse objects or events within narrow subfields of view. In order to identify and track the objects or events without the means of dynamic adaptation to be afforded by SyFT, it would be necessary to post-process data from an image-data space consisting of terabytes of data. Such post-processing would be time-consuming and, as a consequence, could result in missing significant events that could not be observed at all due to the time evolution of such events or could not be observed at required levels of fidelity without such real-time adaptations as adjusting focal-plane operating conditions or aiming of the focal plane in different directions to track such events. The basic concept of foveal imaging is straightforward: In imitation of a natural eye, a foveal-vision image sensor is designed to offer higher resolution in a small region of interest (ROI) within its field of view. Foveal vision reduces the amount of unwanted information that must be transferred from the image sensor to external image-data-processing circuitry. The aforementioned basic concept is not new in itself: indeed, image sensors based on these concepts have been described in several previous NASA Tech Briefs articles. Active-pixel integrated-circuit image sensors that can be programmed in real time to effect foveal artificial vision on demand are one such example. What is new in SyFT is a synergistic combination of recent advances in foveal imaging, computing, and related fields, along with a generalization of the basic foveal-vision concept to admit a synthetic fovea that is not restricted to one contiguous region of an image.
Hoenk, Michael↗
Delta-Doped High Purity Silicon UV-NIR CCDs with High QE and Low Dark Current
Delta doping process was developed on p-channel CCDs for MIDEX-Orion and JDEM/SNAP and was applied to large format (2k x4k) CCDs. Delta doping is applied to fully-fabricated CCDs (complete with Al metallization). High QE and low dark current is demonstrated with delta doped p-channel CCDs. In-house AR coating is demonstrated. Advantages include: Delta doping enables high QE and stability across the entire spectral range attainable with silicon. Delta doping is a low temperature process and is compatible with fully-fabricated detector arrays. Same base device for Orion two channels. High radiation tolerance and no thinning requirements of high purity p-channel. CCDs are additional advantages.
Orion↗
Delta Doping High Purity CCDs and CMOS for LSST
A viewgraph presentation describing delta doping high purity CCD's and CMOS for LSST is shown. The topics include: 1) Overview of JPL s versatile back-surface process for CCDs and CMOS; 2) Application to SNAP and ORION missions; 3) Delta doping as a back-surface electrode for fully depleted LBNL CCDs; 4) Delta doping high purity CCDs for SNAP and ORION; 5) JPL CMP thinning process development; and 6) Antireflection coating process development.
CMOS↗
N-Type delta Doping of High-Purity Silicon Imaging Arrays
A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.
Blacksberg, Jordana↗
A back-illuminated megapixel CMOS image sensor
In this paper, we present the test and characterization results for a back-illuminated megapixel CMOS imager. The imager pixel consists of a standard junction photodiode coupled to a three transistor-per-pixel switched source-follower readout [1]. The imager also consists of integrated timing and control and bias generation circuits, and provides analog output. The analog column-scan circuits were implemented in such a way that the imager could be configured to run in off-chip correlated double-sampling (CDS) mode. The imager was originally designed for normal front-illuminated operation, and was fabricated in a commercially available 0.5 pn triple-metal CMOS-imager compatible process. For backside illumination, the imager was thinned by etching away the substrate was etched away in a post-fabrication processing step.
Complementary Metal Oxide Semiconductor imager (CM↗
Nanocarpets for Trapping Microscopic Particles
Nanocarpets that is, carpets of carbon nanotubes are undergoing development as means of trapping microscopic particles for scientific analysis. Examples of such particles include inorganic particles, pollen, bacteria, and spores. Nanocarpets can be characterized as scaled-down versions of ordinary macroscopic floor carpets, which trap dust and other particulate matter, albeit not purposefully. Nanocarpets can also be characterized as mimicking both the structure and the particle-trapping behavior of ciliated lung epithelia, the carbon nanotubes being analogous to cilia. Carbon nanotubes can easily be chemically functionalized for selective trapping of specific particles of interest. One could, alternatively, use such other three-dimensionally-structured materials as aerogels and activated carbon for the purposeful trapping of microscopic particles. However, nanocarpets offer important advantages over these alternative materials: (1) Nanocarpets are amenable to nonintrusive probing by optical means; and (2) Nanocarpets offer greater surface-to-volume ratios.
Noca, Flavio↗
Field emission testing of carbon nanotubes for THz frequency vacuum microwave tube sources
A carbon nanotube-based high current density electron field emission source is under development at Jet Propulsion Laboratory (JPL) for submillimeter-wave power generation.
nanotubes↗
Engineered Carbon Nanotube Materials for High-Q Nanomechanical Resonators
This document represents a presentation offered by the Jet Propulsion Laboratory, with assistance from researchers from Brown University and Northrop Grumman. The presentation took place in Seoul, Korea in July 2003 and attempted to demonstrate the fabrication approach regarding the development of high quality factor (high-Q) mechanical oscillators (in the forms of a tunable nanotube resonator and a nanotube array radio frequency [RF] filter) aimed at signal processing and based on carbon nanotubes. The presentation also addressed parallel efforts to develop both in-plane single nanotube resonators as well as vertical array power devices.
chemical vapor depositions↗
Arrays of Carbon Nanotubes as RF Filters in Waveguides
Brushlike arrays of carbon nanotubes embedded in microstrip waveguides provide highly efficient (high-Q) mechanical resonators that will enable ultraminiature radio-frequency (RF) integrated circuits. In its basic form, this invention is an RF filter based on a carbon nanotube array embedded in a microstrip (or coplanar) waveguide, as shown in Figure 1. In addition, arrays of these nanotube-based RF filters can be used as an RF filter bank. Applications of this new nanotube array device include a variety of communications and signal-processing technologies. High-Q resonators are essential for stable, low-noise communications, and radar applications. Mechanical oscillators can exhibit orders of magnitude higher Qs than electronic resonant circuits, which are limited by resistive losses. This has motivated the development of a variety of mechanical resonators, including bulk acoustic wave (BAW) resonators, surface acoustic wave (SAW) resonators, and Si and SiC micromachined resonators (known as microelectromechanical systems or MEMS). There is also a strong push to extend the resonant frequencies of these oscillators into the GHz regime of state-of-the-art electronics. Unfortunately, the BAW and SAW devices tend to be large and are not easily integrated into electronic circuits. MEMS structures have been integrated into circuits, but efforts to extend MEMS resonant frequencies into the GHz regime have been difficult because of scaling problems with the capacitively-coupled drive and readout. In contrast, the proposed devices would be much smaller and hence could be more readily incorporated into advanced RF (more specifically, microwave) integrated circuits.
Hoppe, Daniel↗