Engineering topics
Publications and source records attributed to Huang, H. C..
Proposed field-effect transistor consists of three cells which make up one complete FET pellet. Pellet is flip-chip mounted on carrier with source grounded gate and drain posts connected directly to impedance-matching transmission-line segments. Impedance transformers are part of mounting and contact strips.
A single stage amplifier was developed using an 8 gate, 1200 micrometer width device to give a gain of 3.3 + or - 0.1 dB over the 14.4 to 15.4 GHz band with an output power of 0.48 W and 15% minimum efficiency with 0.255 W of input power. With two 8 gate devices combined and matched on the device carrier, using a lumped element format, a gain of 3 dB was attained over the 14.5 to 15.5 GHz band with a maximum efficiency of 9.9% for an output power of 0.8 W.
The possibility of replacing the Reference System antenna in which thermionic devices are used for the dc-to-microwave conversion, with solid-state elements was explored. System, device, and antenna module tradeoff investigations strongly point toward the desirability of changing the transmitter concept to a distributed array of relatively low power elements, deriving their dc power directly from the solar cell array and whose microwave power outputs are combined in space. The approach eliminates the thermal, weight, and dc-voltage distribution problems of a system in which high power tubes are simply replaced with clusters of solid state amplifiers. The proposed approach retains the important advantages of a solid state system: greatly enhanced reliability and graceful degradation of the system.