NASA NTRS · 19800023225
Ku-band field-effect power transistors
Abstract
A single stage amplifier was developed using an 8 gate, 1200 micrometer width device to give a gain of 3.3 + or - 0.1 dB over the 14.4 to 15.4 GHz band with an output power of 0.48 W and 15% minimum efficiency with 0.255 W of input power. With two 8 gate devices combined and matched on the device carrier, using a lumped element format, a gain of 3 dB was attained over the 14.5 to 15.5 GHz band with a maximum efficiency of 9.9% for an output power of 0.8 W.
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Taylor, G. C., Huang, H. C.. 1979-09-01. Ku-band field-effect power transistors. https://ntrs.nasa.gov/citations/19800023225
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