Engineering topics
Publications and source records attributed to Janocko, M. A..
Device for cathodic sputtering utilizes cathode dark-space region adjacent to high negative-potential surfaces. Feedthrough is made of metal and glass, is helium leaktight, and is bakeable; it can be incorporated into any vacuum apparatus.
Research papers on superconducting interactions and properties and on amorphous materials are presented. The search for new superconductors with improved properties was largely concentrated on the study of properties of thin films. An experimental investigation of interaction mechanisms revealed no new superconductivity mechanism. The properties of high transition temperature, type 2 materials prepared in thin film form were studied. A pulsed field solenoid capable of providing fields in excess of 300 k0e was developed. Preliminary X-ray measurements were made of V3Si to determine the behavior of cell constant deformation versus pressure up to 98 kilobars. The electrical properties of amorphous semiconducting materials and bulk and thin film devices, and of amorphous magnetic materials were investigated for developing radiation hard, inexpensive switches and memory elements.
Discussion of the superconducting transition temperature and other superconducting properties of annealed Nb-Al-Ge thin films which were prepared by sputtering from a 3Nb-0.8Al-0.2Ge cathode. Annealing was performed in a high-vacuum environment maintained at 10 to the minus 9th torr or less, for times and temperatures near the optimum conditions for bulk Nb-Al-Ge. Films with transition temperatures from 12 to 16 K were annealed and in all cases a rise in transition temperature was observed, with the maximum value obtained thus far being 17.5 K. The current carrying capacity values, already substantially higher for unannealed thin films than for the bulk, were raised even further in the annealed samples, indicating that annealing has no detrimental effects on the flux pinning in these films.
A series of Mo-Re alloy films has been prepared by sputtering from a composite molybdenum and rhenium cathode. These films were deposited in an ultra-high purity environment onto sapphire substrates which were held at temperatures ranging from 400 to 1300 C. Maximum transition temperatures observed were 15 K which is significantly greater than the highest reported bulk values. Critical current and field characteristics also were found to be considerably greater in the films compared to corresponding bulk samples. Upper critical fields of over 100 kOe were measured. These enhanced properties are discussed in relation to the structural characteristics of the sputtered films.
Niobium carbonitride thin film deposition temperature effects on superconducting properties, considering transition temperature and critical currents and fields
Measurement of the superconducting properties of NbN films prepared by a high purity reactive sputtering process. The transition temperature was found to decrease with decreasing film thickness, while in contrast the critical current vs magnetic field was largely independent of film thickness and even slightly increased when the film thickness went down to 100 A. The average resistivity of the NbN films was 1000 microohm-cm.
High transition temperature superconducting materials thin films composition control by sputtering from hot pressed powder mixture ingots targets
Niobium nitride thin films very high critical current and field characteristics, noting deposition by sputtering
NbN Dayem bridge characteristics, discussing negative resistance region, self induced subharmonic current steps, temperature dependence and microwave radiation effects
Superconducting thin films of beta-tungsten structure Nb-Al-Ge compound, discussing high purity sputtering preparation techniques and properties in magnetic fields
Transition metal interstitial compounds thin film preparation and superconducting properties, emphasizing high critical temperature, rock salt structure and NbN base