Translating and Supplementing Si Based Radiation Effects Knowledge to the Wide Band-Gap Devices of Tomorrow’s Space Flight Missions
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Engineering topics
Publications and source records attributed to Jason Osheroff.
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The purpose of this testing was to perform a Radiation Lot Acceptance Test (RLAT) for Total Ionizing Dose (TID) of MAX4651 Low-Voltage, 4Ω, Quad, SPST, CMOS Analog Switches for the Roman Space Telescope (RST).
The purpose of this testing was to characterize the InterFET Corporation U309 for total dose response. This test shall serve as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. The U309 is a discrete Junction Field Effect Transistor (JFET). High dose rate (HDR) irradiations were performed in this test so that the device susceptibility to Total Ionizing Dose (TID) could be determined.
This presentation provides an overview of recent wide bandgap device radiation hardness assurance activities at NASA and via NASA-funded grant vehicles. Devices include enhancement mode power GaN HEMTs, RF GaN HEMTs, and SiC MOSFETs and JBS diodes.
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