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NASA NTRS · 20205004053

U309 N-Channel Silicon Junction Field Effect Transistor Total Ionizing Dose Characterization Report

Jason Osheroff·Megan Casey
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Abstract

The purpose of this testing was to characterize the InterFET Corporation U309 for total dose response. This test shall serve as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. The U309 is a discrete Junction Field Effect Transistor (JFET). High dose rate (HDR) irradiations were performed in this test so that the device susceptibility to Total Ionizing Dose (TID) could be determined.

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Total Ionizing Dose (TID)InterFET Corporation U309Junction Field Effect Transistor (JFET)

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Jason Osheroff, Megan Casey. 2020-08-01. U309 N-Channel Silicon Junction Field Effect Transistor Total Ionizing Dose Characterization Report. https://ntrs.nasa.gov/citations/20205004053

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