Search NASA⌕ Search

Engineering topics

Johnston, Allan H.

Publications and source records attributed to Johnston, Allan H..

12 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2006

Single-Event Transients in Voltage Regulators

Single-event transients are investigated for two voltage regulator circuits that are widely used in space. A circuit-level model is developed that can be used to determine how transients are affected by different circuit application conditions. Internal protection circuits-which are affected by load as well as internal thermal effects-can also be triggered from heavy ions, causing dropouts or shutdown ranging from milliseconds to seconds. Although conventional output transients can be reduced by adding load capacitance, that approach is ineffective for dropouts from protection circuitry.

circuit testing↗
NASA NTRS2006

Testing and Qualifying Linear Integrated Circuits for Radiation Degradation in Space

This paper discusses mechanisms and circuit-related factors that affect the degradation of linear integrated circuits from radiation in space. For some circuits there is sufficient degradation to affect performance at total dose levels below 4 krad(Si) because the circuit design techniques require higher gain for the pnp transistors that are the most sensitive to radiation. Qualification methods are recommended that include displacement damage as well as ionization damage.

integrated circuit testing↗
NASA NTRS2006

Radiation Effects on Optoelectronic Devices in Space Missions

Radiation degradation of optoelectronic devices is discussed, including effects on optical emitters, detectors and optocouplers. The importance of displacement damage is emphasized, including the limitations of non-ionizing energy loss (NIEL) in normalizing damage. Failures of optoelectronics in fielded space systems are discussed, along with testing and qualification methods.

optoelectronics↗
NASA NTRS2005

Total Ionizing Dose Effects in Bipolar and BiCMOS Devices

This paper describes total ionizing dose (TID) test results performed at JPL. Bipolar and BiCMOS device samples were tested exhibiting significant degradation and failures at different irradiation levels. Linear technology which is susceptible to low-dose dependency (ELDRS) exhibited greater damage for devices tested under zero bias condition.

radiation effects↗
NASA NTRS2004

Dark Current Degradation of Near Infrared Avalanche Photodiodes from Proton Irradiation

InGaAs and Ge avalanche photodiodes (APDs) are examined for the effects of 63-MeV protons on dark current. Dark current increases were large and similar to prior results for silicon APDs, despite the smaller size of InGaAs and Ge devices. Bulk dark current increases from displacement damage in the depletion regions appeared to be the dominant contributor to overall dark current degradation. Differences in displacement damage factors are discussed as they relate to structural and material differences between devices.

indium compounds↗
NASA NTRS2004

Optical Sources, Fibers and Photonic Subsystems

This section of the Short Course discusses radiation effects in photonic components, along with some examples of the radiation response of photonic subsystems. It begins with a review of some optical principles that are important in the discussions that follow.

optoelectonics↗
NASA NTRS2004

Proton damage in LEDs with wavelengths above the silicon wavelength cutoff

This paper has examined the effects of proton damage on two types of LEDs in the wavelength region above the silicon bandgap limit. Unlike AlGaAs LEDs, the optical power linearity in both types of devices changes significantly after irradiation. This may be caused by the lower heterojunction barriers associated with these materials.

Johnston, Allan H.↗
NASA NTRS1995

Effect Of Clock Mode On Radiation Hardness Of An ADC

Report discusses techniques for testing and evaluating effects of total dosages of ionizing radiation on performances of high-resolution successive-approximation analog-to-digital converters (ADCs), without having to test each individual bit or transition. Reduces cost of testing by reducing tests to few critical parametric measurements, from which one determines approximate radiation failure levels providing good approximations of responses of converters for purpose of total-dose-radiation evaluations.

Lee, Choon I.↗