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NASA NTRS · 20090014095

Total Ionizing Dose Effects in Bipolar and BiCMOS Devices

Chavez, Rosa M.·Rax, Bernard G.·Scheick, Leif Z.·Johnston, Allan H.·FROM
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Abstract

This paper describes total ionizing dose (TID) test results performed at JPL. Bipolar and BiCMOS device samples were tested exhibiting significant degradation and failures at different irradiation levels. Linear technology which is susceptible to low-dose dependency (ELDRS) exhibited greater damage for devices tested under zero bias condition.

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radiation effectsBiCMOS analogue integrated circuitsintegrated circuit testingbipolar analogue integrated circuits

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Chavez, Rosa M., Rax, Bernard G., Scheick, Leif Z., Johnston, Allan H., FROM. 2005-07-11. Total Ionizing Dose Effects in Bipolar and BiCMOS Devices. https://ntrs.nasa.gov/citations/20090014095

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