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Kalarickal, Nidhin Kurian

Publications and source records attributed to Kalarickal, Nidhin Kurian.

7 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Plasma-assisted deposition and characterization of Al 2 O 3 dielectric layers on (001) β -Ga 2 O 3

In this work, we have investigated plasma-assisted deposition of Al 2 O 3 on HVPE (001) β-Ga 2 O 3 and evaluated the dielectric quality from electrical measurements on fabricated metal-oxide-semiconductor (MOS) capacitors. The interface structure and crystallinity of the films were investigated as a function of the growth temperature. The dielectric/semiconductor interfaces were found to have reverse breakdown electric fields up to 5.3 MV/cm in the β-Ga 2 O 3 , with relatively low hysteresis in capacitance–voltage and low leakage current. We determined a negative fixed interface charge density at the interface from analysis of thickness-dependent capacitance voltage data. In conclusion, this study shows the advantage of using plasma-assisted deposition to achieve high breakdown strength Al 2 O 3 /β-Ga 2 O 3 MOS structures for device application purposes.

42 ENGINEERING↗
DOE OSTI2023

β -Ga 2 O 3 trench Schottky diodes by low-damage Ga-atomic beam etching

β-Ga 2 O 3 trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique with excellent field strength and power device figure of merit are demonstrated. Trench formation was accomplished by a low-damage Ga flux etch that enables near-ideal forward operating characteristics that are independent of fin orientation. The reverse breakdown field strength of greater than 5.10 MV/cm is demonstrated at a breakdown voltage of 1.45 kV. This result demonstrates the potential for Ga atomic beam etching and high-quality dielectric layers for improved performance in β-Ga 2 O 3 vertical power devices.

42 ENGINEERING↗
DOE OSTI2022

β -Ga 2 O 3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination Available

In this work, we demonstrate a deep mesa etch design for efficient edge field termination in β-Ga 2 O 3 Schottky barrier diodes (SBDs). The proposed design enabled parallel plate fields higher than 4.1 MV/cm with negligible change to the device ON characteristics. The effect of BCl 3 /Cl 2 -based dry etch on (100) and (010) etched vertical sidewalls is also analyzed. A remarkable anisotropy in depletion was observed for etch along (100) and (010) sidewalls. In conclusion, this work provides insight into the impact of etching on n-type Ga 2 O 3 and shows a promising method to realize efficient field termination for high breakdown field strength SBDs.

42 ENGINEERING↗
DOE OSTI2022

β -Ga 2 O 3 MESFETs with insulating Mg-doped buffer grown by plasma-assisted molecular beam epitaxy

In this work, we develop in situ Mg doping techniques in plasma-assisted molecular beam epitaxy (PAMBE) of β -Ga 2 O 3 to compensate Si dopants at the substrate epilayer growth interface and eliminate parasitic leakage paths. Both abrupt and uniform Mg doping profiles over a wide range of concentrations were achieved in β -Ga 2 O 3 epilayers grown by PAMBE. Capacitance–voltage characteristics of Si and Mg co-doped samples confirmed the compensating effect of the Mg dopants. Mg delta-doping was then integrated into a β -Ga 2 O 3 metal-semiconductor field effect transistor structure and shown to be effective in eliminating source leakage. In conclusion, the results presented here show that Mg doping is a promising way to engineer insulating buffer layers for β -Ga 2 O 3 lateral devices grown by PAMBE.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Integration of high permittivity BaTiO 3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors

In this Letter, we discuss AlGaN/GaN HEMTs integrated with high permittivity BaTiO 3 dielectric to enable enhanced breakdown characteristics. We show that using high permittivity BaTiO 3 dielectric layers in the gate and drain access regions prevents premature gate breakdown, leading to average breakdown fields exceeding 3 MV/cm at a gate-to-drain spacing of 4 μm. The higher breakdown fields enable a high power figure of merit above 2.4 GW/cm 2 in devices with a gate-to-drain spacing of 6 μm. This work demonstrates that electrostatic engineering using high-permittivity dielectrics can enable AlGaN/GaN HEMTs in approaching the material breakdown field limits.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Atomic scale investigation of aluminum incorporation, defects, and phase stability in β -(Al x Ga 1-x ) 2 O 3 films

The development of novel ultra-wide bandgap (UWBG) materials requires precise understanding of the atomic level structural origins that give rise to their important properties. We study the aluminum atom incorporation, defect formation, and their relationships with phase stability in β-(Al x Ga 1-x ) 2 O 3 films, a promising candidate for UWBG applications, to explain atomic scale structural characteristics and properties using a combination of quantitative scanning transmission electron microscopy (STEM) and density functional theory (DFT). Our STEM analysis indicates that ~54% of the incorporated Al substitutes on the octahedrally coordinated Ga 2 site in a series of films grown with different techniques and alloy concentrations. DFT calculations show that, while Al energetically prefers the octahedral site, surface reconstructions and kinetic limitations during the epitaxial growth are responsible for Al occupying both octahedral and tetrahedral sites in (Al x Ga 1-x ) 2 O 3 , ultimately limiting the stability of the β-phase at x < ~50%. Local heterogeneity of composition results in the formation of a planar defect, affecting the stability of the β-phase. The similarity of such inclusions to the metastable γ-phase is discussed.

36 MATERIALS SCIENCE↗