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Keo, S.

Publications and source records attributed to Keo, S..

At least 19 records

Free Space Optical Communication Utilizing Mid-Infrared Interband Cascade Laser

A Free Space Optical (FSO) link utilizing mid-IR Interband Cascade lasers has been demonstrated in the 3-5 micron atmospheric transmission window with data rates up to 70 Mb/s and bit-error-rate (BER) less than 10 (exp -8). The performance of the mid-IR FSO link has been compared with the performance of a near-IR link under various fog conditions using an indoor communication testbed. These experiments demonstrated the lower attenuation and scintillation advantages of a mid-IR FSO link through fog than a 1550 nm FSO link.

semiconductor lasers↗

Room-temperature continuous operation of InAsSb quantum-dot lasers near 2 mu m based on (100) InP substrate

Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 mu m up to 25 degrees C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13 percent is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm(sup 2). With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/degrees C is measured, which is even lower than that caused by the refractive index change.

Semiconductor lasers quantum dots↗

Multi-Wavelength Mode-Locked Laser Arrays for WDM Applications

Multi-wavelength arrays of colliding pulse mode-locked (CPM) lasers have been demonstrated for wavelength division multiplexing (WDM) applications. The need for increased bandwidth is driving the development of both increased speed in time division multiplexing (TDM) and more channels in WDM for fiber optic communication systems.

division↗

Improved Saturation Performance in High Speed Waveguide Photodetectors at 1.3 ??sing an Asymmetric InA1GaAs/InGaAsP Structure

Waveguide photodetector (WGPD) results have recently been presented demonstrating the very large bandwidth-efficiency product potential of these devices. Improved saturation and linearity characteristics are realized in waveguide p-i-n photodetectors at 1.3 ??y using an asymmetric cladding structure with InA1GaAs/InGaAsP in the anode and InGaAsP in the cathode.

multi-mode structures photocurrent saturation wave↗

InP-Based Ridge Waveguide Lasers for Wavelength Division Multiplexing Applications

Wavelength division multiplexed (WDM) systems place stringent requirements on the absolute wavelength and wavelength spacing of the elements in laser arrays. Ridge waveguides (RW) show excellent potential for practical implementation due to their simple fabrication with relaxed fabrication tolerances, high reliability and good performancce. An analysis of the fabrication tolerances for RW and buried heterostructure (BH) devices is performed, showing the advantages offered by the ridge design.

wavelength↗

Long Wavelength INGaAs/InGaAsP Quantum Well Lasers at [approximately] 2.0 micrometers

InGaAs/InGaAsP strained quantum well buried heterostructure and distributed feedback lasers emitting at wavelengths as long as 2.06 micrometers with low internal loss and threshold currents have been demonstrated for the first time. The room and high temperature characteristics and the threshold gain are discussed.

quantum well lasers indium gallium↗

CW Performance of an InGaAs-GaAs-AlGaAs Laterally-Coupled Distributed Feedback (LC-DFB) Ridge Laser Diode

Single-mode distributed feedback (DFB) laser diodes typically require a two-step epitaxial growth or use of a corrugated substrate. We demonstrate InGaAs-GaAs-AlGaAs DFB lasers fabricated from a single epitaxial growth using lateral evanescent coupling of the optical field to a surface grating etehed along the sides of the ridge. A CW threshold current of 25 mA and external quantum efficiency of 0.48 mW/mA per facet were measured for a 1 mm cavity length device with anti-reflection coated facets. Single-mode output powers as high as 11 mW per facet at 935 nm wavelength were attained. A coupling coefficient of at least 5.8/cm was calculated from the subthreshold spectrum taking into account the 2% residual facet reflectivity.

Martin, R. D.↗