Monolithically Integrated InGaAsP/InP Laser/Modulator Using Identical Layer Approach for Opto-Electronic Oscillator

Wu, C.; Keo, S.; Yao, S.; Turner, T. E.; Davis, L.; Young, M. G.; Maleki, L.; Forouhar, S.

NASA NTRS · 20060041455

Monolithically Integrated InGaAsP/InP Laser/Modulator Using Identical Layer Approach for Opto-Electronic Oscillator

Wu, C.·Keo, S.·Yao, S.·Turner, T. E.·Davis, L.·Young, M. G.·Maleki, L.·Forouhar, S.

Abstract

In this paper, we will present the design and fabrication of an integrated semiconductor laser/modulator using the identical active layer approach on InGaAsP/InP material.

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Laser Modulator Mode-locked lasers microwave generation Opto-electronic oscillator RF Photonics Integrated Optics OEIC

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Wu, C., Keo, S., Yao, S., Turner, T. E., Davis, L., Young, M. G., Maleki, L., Forouhar, S.. 1998-09-16. Monolithically Integrated InGaAsP/InP Laser/Modulator Using Identical Layer Approach for Opto-Electronic Oscillator. https://ntrs.nasa.gov/citations/20060041455

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