Diagonal parameter shifts in strained semiconductors in the empirical tight-binding theory
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Engineering topics
Publications and source records attributed to Klimeck, G..
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Quantitative simulations of carrier transport in physical systems that are of the size of a few nanometers require the use of quantum mechanical models at a very fundamental level.
This seminar will review the development of a comprehensive nanoelectronic modeling tool (NEMO 1-D and NEMO 3-D) and its application to high-speed electronics (resonant tunneling diodes) and IR detectors and lasers (quantum dots and 1-D heterostructures).
A ten-band sp2s* second-nearest neighbor tight-binding model has been used to model the electronic structure of various AlxGa1-xAs quantum cascade laser gain media.
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Stereo image correlation is an essential ingredient to Mars missions for mapping and ranging purposes.
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Disorder-induced broadening of the conduction and valence band eigenenergies is calculated for an ensemble of dome-shaped InGaAs quantum dots of diameter 20nm using an sp3d5s* tight binding model.
The convergence of electron and hole ground states of a dome-shaped InGaAs quantum dot as a function of the size of the surrounding buffer is explored.
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This paper describes the cluster machines used for a wide variety of applications, and then discusses a image data processing application in more detail.
In this paper we outline the results of using three generations of cluster machines at JPL for a select set of applications drawn from a larger development effort.
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