Quantum dot modeling using NEMO 3-D
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Engineering topics
Publications and source records attributed to Klimeck, G..
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The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect-gap material, and InAs and CdSe as examples of typical III-V and II-VI direct-gap materials.
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MS PowerPoint Presentation.
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Quantum Dots (QDs) are solid state structures made of semiconductors or metals that confine a small number of electrons into a small space. The confinement of electrons is achieved by the placement of some insulating material(s) around a central, well conducting region. Thus, they can ve viewed as artificial atoms.
Quantum Dots (QDs) are solid-state structures made of semiconductors or metals that confine a small number of electrons into a small space. The confinement of electrons is achieved by the placement of some insulating material(s) around a central, well-conducting region. Thus, they can be viewed as artificial atoms. They therefore represent the ultimate limit of the semiconductor device scaling. Additional information is contained in the original extended abstract.
This paper describes the EHW development system, a tool that performs the evolutionary synthesis of electronic circuits, using the SPICE simulator and the Field Programmable Transistor Array hardware (FPTA) developed at JPL.
Evolvable Hardware (EHW) refers to HW design and self-reconfiguration using evolutionary/genetic mechanisms. The paper presents an overview of some key concepts of EHW, describing also a set of selected applications.
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Unintuitive hole transport phenomena through heterostructures are presented.
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A genetic algorithm approach is used to fit orbital interaction energies of sp3s* tight-binding models for the nine binary compound semiconductors consistent of Ga, Al, In and As, P, Sb at room temperature.