Search NASA⌕ Search

Engineering topics

Kosonocky, W. F.

Publications and source records attributed to Kosonocky, W. F..

6 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

Radiometric infrared focal plane array imaging system for thermographic applications

This document describes research performed under the Radiometric Infrared Focal Plane Array Imaging System for Thermographic Applications contract. This research investigated the feasibility of using platinum silicide (PtSi) Schottky-barrier infrared focal plane arrays (IR FPAs) for NASA Langley's specific radiometric thermal imaging requirements. The initial goal of this design was to develop a high spatial resolution radiometer with an NETD of 1 percent of the temperature reading over the range of 0 to 250 C. The proposed camera design developed during this study and described in this report provides: (1) high spatial resolution (full-TV resolution); (2) high thermal dynamic range (0 to 250 C); (3) the ability to image rapid, large thermal transients utilizing electronic exposure control (commandable dynamic range of 2,500,000:1 with exposure control latency of 33 ms); (4) high uniformity (0.5 percent nonuniformity after correction); and (5) high thermal resolution (0.1 C at 25 C background and 0.5 C at 250 C background).

Esposito, B. J.↗
NASA NTRS1985

Shortwave infrared 512 x 2 line sensor for earth resources applications

As part of the NASA remote-sensing Multispectral Linear Array Program, an edge-buttable 512 x 2 IRCCD line image sensor with 30-micron Pd2Si Schottky-barrier detectors is developed for operation with passive cooling at 120 K in the 1.1-2.5 micron short infrared band. On-chip CCD multiplexers provide one video output for each 512 detector band. The monolithic silicon line imager performance at a 4-ms optical integration time includes a signal-to-noise ratio of 241 for irradiance of 7.2 microwatts/sq cm at 1.65 microns wavelength, a 5000 dynamic range, a modulation transfer function, greater than 60 percent at the Nyquist frequency, and an 18-milliwatt imager chip total power dissipation. Blemish-free images with three percent nonuniformity under illumination and nonlinearity of 1.25 percent are obtained. A five SWIR imager hybrid focal plane was constructed, demonstrating the feasibility of arrays with only a two-detector loss at each joint.

Tower, J. R.↗
NASA NTRS1973

Advanced investigation of two-phase charge-coupled devices

The performance of experimental two phase, charge-coupled shift registers constructed using polysilicon gates overlapped by aluminum gates was studied. Shift registers with 64, 128, and 500 stages were built and operated. Devices were operated at the maximum clock frequency of 20 MHz. Loss per transfer of less than .0001 was demonstrated for fat zero operation. The effect upon transfer efficiency of various structural and materials parameters was investigated including substrate orientation, resistivity, and conductivity type; channel width and channel length; and method of channel confinement. Operation of the devices with and without fat zero was studied as well as operation in the complete charge transfer mode and the bias charge, or bucket brigade mode.

Kosonocky, W. F.↗
NASA NTRS1973

Two-phase charge-coupled device

A charge-transfer efficiency of 99.99% per stage was achieved in the fat-zero mode of operation of 64- and 128-stage two-phase charge-coupled shift registers at 1.0-MHz clock frequency. The experimental two-phase charge-coupled shift registers were constructed in the form of polysilicon gates overlapped by aluminum gates. The unidirectional signal flow was accomplished by using n-type substrates with 0.5 to 1.0 ohm-cm resistivity in conjunction with a channel oxide thickness of 1000 A for the polysilicon gates and 3000 A for the aluminum gates. The operation of the tested shift registers with fat zero is in good agreement with the free-charge transfer characteristics expected for the tested structures. The charge-transfer losses observed when operating the experimental shift registers without the fat zero are attributed to fast interface state trapping. The analytical part of the report contains a review backed up by an extensive appendix of the free-charge transfer characteristics of CCD's in terms of thermal diffusion, self-induced drift, and fringing field drift. Also, a model was developed for the charge-transfer losses resulting from charge trapping by fast interface states. The proposed model was verified by the operation of the experimental two-phase charge-coupled shift registers.

Kosonocky, W. F.↗
NASA NTRS1972

Fast-interface-state losses in charge-coupled devices.

A simple model is presented that makes it possible to predict signal losses in charge-coupled devices due to fast-interface-state trapping. Presented experimental losses in a twelve-bit two-phase charge-coupled device with overlapping Si and Al gates are shown to agree well with the prediction of the model.

Carnes, J. E.↗