Search NASA⌕ Search

Engineering topics

Leduc, H. G.

Publications and source records attributed to Leduc, H. G..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

Ultra-Sensitive Transition-Edge Sensors (TESs) for Far-IR/Submm Space-Borne Spectroscopy

We have built surface micromachined thin-film metallized Si(x)N(y) optical absorbers for transition-edge sensors (TESs) suitable for the Background - Limited far-IR/Submm Spectrograph (BLISS). BLISS is a broadband (38 micrometers - 433 micrometers), grating spectrometer consisting of five wavebands each with a modest resolution of R (is) approx. 1000. Because BLISS requires the effective noise equivalent power (NEP) of the TES to be below 10 (exp 19) W/Hz(exp 1/2), our TESs consist of four long (1000 micrometers), narrow (0.4 micrometers ), and thin (0.25 micrometers ) Si(x) N(y) support beams that reduce the thermal conductance G between the substrate and the optical absorber. To reduce the heat capacity of the absorber and make the response time tau fast enough for BLISS, our absorbers are patterned into a mesh geometry with a fill factor of less than 10%. We use a bilayer of Ti/Au to make the effective impedance of the absorber match the impedance of the incoming radiation for each band. Measurements of the response time of the metallized absorbers to heat pulses show that their heat capacity exceeds the predictions of the Debye model. Our results are suggestive that the surface of the low pressure chemical vapor deposition (LPCVD) Si(x)N(y) used in the absorbers' construction is the source of microstates that dominate the heat capacity.

far-IR spectrometer↗
NASA NTRS2006

Progress on Background-Limited Membrane-Isolated TES Bolometers for Far-IR/Submillimeter Spectroscopy

To determine the lowest attainable phonon noise equivalent power (NEP) for membrane-isolation bolometers, we fabricated and measured the thermal conductance of suspended Si3N4 beams with different geometries via a noise thermometry technique. We measured beam cross-sectional areas ranging from 0.35 x 0.5 (micro)m(sup 2) to 135 x 1.0 (micro)m(sup 2) and beam lengths ranging from (micro)m to 8300 (micro)m. The measurements directly imply that membrane-isolation bolometers are capable of reaching a phonon noise equivalent power (NEP) of 4 x 10(sup -20)W/Hz(sup 1)/O . This NEP adequate for the Background-Limited Infrared-Submillimeter Spectrograph (BLISS) proposed for the Japanese SPICA observatory, and adequate for NASA's SAFIR observatory, a 10-meter, 4 K telescope to be deployed at L2. Further, we measured the heat capacity of a suspended Si 3N 4 membrane and show how this result implies that one can make membrane-isolation bolometers with a response time which is fast enough for BLISS.

submillimeter spectrometer↗
NASA NTRS2004

THz Instrumentation for the Herschel Space Observatory's Heterodyne Instrument for Far Infrared

The Heterodyne Instrument for Far Infrared (HIFI) on ESA's Herschel Space Observatory utilizes a variety of novel RF components in its five SIS receiver channels covering 480-1250 GHz and two HEB receiver channels covering 1410-1910 GHz. The local oscillator unit will be passively cooled while the focal plane unit is cooled by superfluid helium and cold helium vapors. HIFI employs W-band GaAs amplifiers, InP HEMT low noise IF amplifiers, fixed tuned broadband planar diode multipliers, high power W-bapd Isolators, and novel material systems in the SIS mixers. The National Aeronautics and Space Administration through the Jet Propulsion Laboratory is managing the development of the highest frequency (1119-1250 GHz) SIS mixers, the local oscillators oscillators for the three highest frequency receivers as well as W-band power amplifiers, high power W-band isolators, varactor diode devices for all high frequency multipliers and InP HEMT components for all the receiver channels intermediate frequency amplifiers. The NASA developed components represent a significant advancement in the available performance. This paper presents an update of the performance and the current state of development.

local oscillators↗
NASA NTRS2002

The Millimeter-Wave Properties of Superconducting Microstrip Lines

We have developed a novel technique for making high quality measurements of the millimeter-wave properties of superconducting thin-film microstrip transmission lines. Our experimental technique currently covers the 75-100 GHz band. The method is based on standing wave resonances in an open ended transmission line. We obtain information on the phase velocity and loss of the microstrip. Our data for Nb/SiO/Nb lines, taken at 4.2 K and 1.6 K, can be explained by a single set of physical parameters. Our preliminary conclusion is that the loss is dominated by the SiO dielectric, with a temperature-independent loss tangent of 5.3 +/- 0.5 x 10(exp -3) for our samples.

Vayonakis, A.↗
NASA NTRS1993

Quasi-optical Josephson-junction oscillator arrays

Josephson junctions are natural voltage-controlled oscillators capable of generating submillimeter-wavelength radiation, but a single junction usually can produce only 100 nW of power and often has a broad spectral linewidth. The authors are investigating 2D quasi-optical power combining arrays of 103 and 104 NbN/MgO/NbN and Nb/Al-AlO(x)/Nb junctions to overcome these limitations. The junctions are dc-biased in parallel and are distributed along interdigitated lines. The arrays couple to a resonant mode of a Fabry-Perot cavity to achieve mutual phase-locking. The array configuration has a relatively low impedance, which should allow the capacitance of the junctions to be tuned out at the oscillation frequency.

Stern, J. A.↗
NASA NTRS1993

A low noise 665 GHz SIS quasi-particle waveguide receiver

Recent results on a 565-690 GHz SIS heterodyne receiver employing a 0.36 micron(sup 2) Nb/AlOx/Nb SIS tunnel junction with high quality circular non-contacting back short and E-plane tuners in a full height wave guide mount are reported. No resonant tuning structures were incorporated in the junction design at this time, even though such structures are expected to help the performance of the receiver. The receiver operates to at least the gap frequency of Niobium, approximately 680 GHz. Typical receiver noise temperatures from 565-690 GHz range from 160K to 230K with a best value of 185K DSB at 648 GHz. With the mixer cooled from 4.3K to 2K the measured receiver noise temperatures decreased by approximately 15 percent, giving roughly 180K DSB from 660 to 680 GHz. The receiver has a full 1 GHz IF pass band and was successfully installed at the Caltech Submillimeter Observatory in Hawaii.

Kooi, J. W.↗
NASA NTRS1992

Dispersion in Nb microstrip transmission lines at submillimeter wave frequencies

We have measured the effects of dispersion on the resonant mode frequencies of open-ended Nb-SiO(x)-Nb microstrip transmission lines over a frequency range from 50 to 800 GHz. Submicron Nb/Al-AlOx/Nb Josephson junctions were used as both voltage-controlled oscillators and detectors to sample the high order modes of the resonators. The resonator modes are equally spaced up to about 550 GHz where the mode spacing start to decrease gradually to a minimum above the gap frequency of about 700 GHz and then increases. Results are in good agreement with the expected theoretical behavior based on the Mattis-Bardeen conductivity of the superconductor line.

Javadi, H. H. S.↗
NASA NTRS1992

A low-noise 492 GHz SIS waveguide receiver

The design and performance are described of an SIS waveguide receiver which provides low noise performance from 375 to 510 GHz. At its design frequency of 492 GHz the receiver has a double-sideband noise temperature of about 172 K. By using embedded magnetic-field concentrators Josephson pair tunneling is effectively suppressed. Techniques for improving receiver performance are discussed.

Walker, C. K.↗
NASA NTRS1992

Applications of submillimeter wave technology for SDI

This paper examines the potential use of using submillimeter wave technology (actually 3 mm to 100 microns, or frequencies between 100 GHz and 3 THz) for SDI applications, especially for endo-KEW systems. The requirements and functions for a multipurpose weapon sensor are considered. The emphasis is on active sensors, but certain elements of passive sensors are mentioned that could play an important role. The rest of the paper provides information on the state-of-the-art in submillimeter wave technology, especially current component activity, and future plans.

Kile, J. N.↗
NASA NTRS1992

A low noise 230 GHz heterodyne receiver employing .25 sq micron area Nb/AlO(x)/Nb tunnel junctions

Recent results for a full height rectangular waveguide mixer with an integrated IF matching network are reported. Two 0.25 sq micron Nb/AlO(x)/Nb superconducting insulating superconducting (SIS) tunnel junctions with a current density of about 8500 A/sq cm and omega RC of about 2.5 at 230 GHz have been tested. Detailed measurements of the receiver noise have been made from 200-290 GHz for both junctions at 4.2 K. The lowest receiver noise temperatures were recorded at 239 GHz, measuring 48 K DSB at 4.2 K and 40 K DSB at 2.1 K. The 230 GHz receiver incorporates a one octave wide integrated low pass filter and matching network which transforms the pumped IF junction impedance to 50 ohms over a wide range of impedances.

Kooi, Jacob W.↗
NASA NTRS1991

Submicron area NbN/MgO/NbN tunnel junctions for SIS mixer applications

The development of submicron area mixer elements for operation in the submillimeter wave range is discussed. High-current-density NbN/MgO/NbN tunnel junctions with areas down to 0.1 sq microns have been fabricated in both planar and edge geometries. The planar junctions were fabricated from in situ deposited trilayers using electron-beam lithography to pattern submicron area mesas. Modifications of fabrication techniques used in larger-area NbN tunnel junctions are required and are discussed. The NbN/MgO/NbN edge junction process using sapphire substrates has been transferred to technologically important quartz substrates using MgO buffer layers to minimize substrate interactions. The two junction geometries are compared and contrasted in the context of submillimeter wave mixer applications.

Leduc, H. G.↗
NASA NTRS1991

Characterization of NbN films and tunnel junctions

Properties of NbN films and NbN/MgO/NbN tunnel junctions are discussed. NbN junctions are being developed for use in high-frequency, SIS quasiparticle mixers. To properly design mixer circuits, junction and film properties need to be characterized. The specific capacitance of NbN/MgO/NbN junctions has been measured as a function of the product of the normal-state resistance and the junction area (RnA), and it is found to vary by more than a factor of two (35-85 fF/sq microns) over the range of RnA measured (1000-50 ohm sq microns). This variation is important because the specific capacitance determines the RC speed of the tunnel junction at a given RnA value. The magnetic penetration depth of NbN films deposited under different conditions is also measured. The magnetic penetration depth affects the design of microstrip line used in RF tuning circuits. Control of the magnetic penetration depth is necessary to fabricate reproducible tuning circuits. Additionally, the critical current uniformity for arrays of 100 junctions has been measured. Junction uniformity will affect the design of focal-plane arrays of SIS mixers. Finally, the relevance of these measurements to the design of Josephson electronics is discussed.

Stern, J. A.↗
NASA NTRS1990

Development of components for submillimeter wave heterodyne radiometers at JPL

Components for the key elements of submillimeter wave heterodyne receivers are described. The devices and components are inherently space qualifiable having low power and mass needs and exhibiting robustness. Nb and NbN superconductor insulator superconductor (SIS) tunnel junctions are selected for the nonlinear mixing element because of their robustness. NbN exhibits a large superconducting bandgap, allowing operation in excess of 1500 GHz. Both waveguide mounts, for the lower frequencies and planar antenna mixer mounts for the higher frequency range, are used. Quasi-optical components are used for frequency multiplexing and combining.

Frerking, Margaret A.↗
NASA NTRS1990

Performance of all-NbN superconductive tunnel junctions as mixers at 205 GHz

Small-area (1x1 sq micron) high-current-density NbN-MgO-NbN tunnel junctions with I-V characteristics suitable for high frequency mixers were fabricated. These junctions are integrated with superconducting microstrip lines designed to resonate out the large junction capacitance. The mixer gain and noise performance were studied near 205 GHz as a function of the inductance provided by the microstrip. This has yielded values of junction capacitance of 85 fF/sq microns and magnetic penetration depth of 3800 angstroms. Mixer noise as low as 133 K has been obtained for properly tuned junctions. This is the best noise performance ever reported for an NbN SIS mixer.

Mcgrath, W. R.↗
NASA NTRS1989

NbN/MgO/NbN edge-geometry tunnel junctions

The fabrication and low-frequency testing of the first edge-geometry NbN/MgO/NbN superconducting tunnel junctions are reported. The use of an edge geometry allows very small junction areas to be obtained, while the all-NbN electrodes permit operation at 8-10 K with a potential maximum operating frequency above 1 THz. Edge definition in the base NbN film was accomplished utilizing Ar ion milling with an Al2O3 milling mask, followed by a lower energy ion cleaning step. This process has produced all-refractory-material tunnel junctions with areas as small as 0.1 sq micron, resistance-area products less than 21 ohm sq micron, and subgap to normal state resistance ratios larger than 18.

Hunt, B. D.↗
NASA NTRS1989

Superconducting phonon spectroscopy using a low-temperature scanning tunneling microscope

The low-temperature scanning tunneling microscope (STM) system described by LeDuc et al. (1987) was used to observe the phonon density of states effects in a superconductor. Using techniques based on those employed in macroscopic tunneling spectroscopy, electron tunneling current-voltage (I-V) spectra were measured for NbN and Pb, and dI/dV vs V spectra were measured using standard analog derivative techniques. I-V measurements on NbN and Pb samples under typical STM conditions showed no evidence for multiparticle tunneling effects.

Leduc, H. G.↗
NASA NTRS1989

NbN/MgO/NbN SIS tunnel junctions for submm wave mixers

The authors report on the fabrication and testing of all-refractory NbN/MgO/NbN SIS (superconductor-insulator-superconductor) tunnel junctions for use as high-frequency mixers. Progress in the development of techniques for the fabrication of submicron-area tunnel junctions is described. Junction structures which have been investigated include mesa, crossline, and edge geometries. Using reactive sputtering techniques, NbN tunnel junctions with critical currents in excess of 104 A/sq cm have been fabricated with Vm values as high as 65 mV and areas down to 0.1 sq micron. Specific capacitance measurements on NbN/MgO/NbN mesa-type tunnel junctions give values in the range 60-90 fF/sq micron. These SIS tunnel junctions have been integrated with antennas and coupling structures for mixer tests in a waveguide receiver at 207 GHz. Preliminary mixer results are reported.

Stern, J. A.↗