NASA NTRS · 19890058077
NbN/MgO/NbN edge-geometry tunnel junctions
Abstract
The fabrication and low-frequency testing of the first edge-geometry NbN/MgO/NbN superconducting tunnel junctions are reported. The use of an edge geometry allows very small junction areas to be obtained, while the all-NbN electrodes permit operation at 8-10 K with a potential maximum operating frequency above 1 THz. Edge definition in the base NbN film was accomplished utilizing Ar ion milling with an Al2O3 milling mask, followed by a lower energy ion cleaning step. This process has produced all-refractory-material tunnel junctions with areas as small as 0.1 sq micron, resistance-area products less than 21 ohm sq micron, and subgap to normal state resistance ratios larger than 18.
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Hunt, B. D., Leduc, H. G., Cypher, S. R., Stern, J. A., Judas, A.. 1989-07-03. NbN/MgO/NbN edge-geometry tunnel junctions. https://ntrs.nasa.gov/citations/19890058077
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