Ex situ bismuth doping for efficient CdSeTe thin-film solar cells with open-circuit voltages exceeding 900 mV
We dope CdTe solar cells with Bi after the device structure is completed using a solution process.
CdTe solar cell↗
Engineering topics
Li, Deng-Bing
Publications and source records attributed to Li, Deng-Bing.
Evaporated CdSe for Efficient Polycrystalline CdSeTe Thin-Film Solar Cells
Recent progress has shown that alloying cadmium telluride (CdTe) with cadmium selenide (CdSe) to create a CdSexTe1-x (CdSeTe) gradient region can significantly boost the performance of polycrystalline CdSeTe thin-film solar cells. However, improper CdSeTe alloying might introduce problematic band alignment and deleterious voids at the front interface, limiting the benefit maximization of this technique. Here, we show that the CdSe layers deposited by thermal evaporation result in CdSeTe cells with a higher performance than the sputtered CdSe. This is because evaporated CdSe can avoid the formation of voids at the front interface, producing improved front junction quality with suppressed front junction nonradiative recombination. The champion cell using evaporated CdSe demonstrated a power conversion efficiency (PCE) of 19.7%, much higher than 18.1% in the cell using sputtered CdSe.
cadmium selenide↗
Approach to determining the limiting recombination mechanism in CdTe-based solar cells
Not Available
Energy & Fuels↗
Seed‐Assisted Growth for Scalable and Efficient Perovskite Solar Modules
Perovskite solar modules (PSMs) have shown remarkable photovoltaic potentials, but they still suffer from large power conversion efficiency (PCE) loss on scale‐up and instability due to inferior uniformity and crystallization over large areas. Herein, the scalable production of efficient and stable PSMs using a suite of all‐scalable fabrication methods featuring a two‐step blade/dip‐coating approach to deposit the perovskite absorber layer is demonstrated. Rubidium chloride is introduced to embed (PbI 2 ) 2 RbCl complex seeds in the first‐deposited PbI 2 precursor, which assists in uniform crystallization of the perovskite layer with high crystallinity and reduced defect density over large areas. Following the optimization of RbCl additives, a champion PSM with 17.9% PCE on a 7.6 × 7.6 cm 2 substrate with a 37 cm 2 aperture area is achieved. Moreover, the RbCl‐incorporated PSMs demonstrate excellent reproducibility and stability under continuous 1 sun illumination. This work shows that the two‐step blade/dip coating is a promising method for producing high‐efficiency and stable PSMs on an industrially relevant scale.
Energy & Fuels↗
Understanding and Advancing Bifacial Thin Film Solar Cells under Dual Illumination
There is a great deal of interest in increasing the energy yield from thin film solar cells by implementing bifacial operation. However, deleterious band bending and high interface recombination at the back transparent electrode can cause problems. Herein, it is investigated how bifacial thin film devices perform when illuminated through the front, back, and simultaneously through both interfaces using numerical modeling. It is shown that the downward band bending near the back interface is reduced during illumination when the carrier concentration is low. This effect is not found when the doping is relatively high, but the minority carrier distribution is still modified. Under either condition, the power generated under bifacial illumination exceeds the sum of the power generated when the illumination is solely from the back or the front. It is also shown that the back-illuminated device performance is independent of the angle at which the light enters the back of the device, which provides accommodation for scattered light. Finally, the power enhancement is calculated for bifacial devices relative to front-illuminated devices, and is shown that any significant loss in frontside power generation is difficult to overcome with back illumination under real-world albedo conditions.
CdTe↗
Oxygen Management to Avoid Photo-Inactive Cd(S,Se) for Efficient Cd(Se,Te) Solar Cells
Our previous work has demonstrated that the formation of a penternary cadmium chalcogenide Cd(O,S,Se,Te) region can significantly reduce the front interface recombination in Cd(Se,Te)-based thin-film solar cells. In this work, we have shown that oxygen management during the device fabrication is crucial to form this region. While both the CdS and CdSe layer depositions and the postdeposition CdCl2 treatment should be conducted in the presence of oxygen, the CdTe deposition should be conducted in an oxygen-free atmosphere. Improper oxygen management leads to low device performance due to the formation of a photoinactive Cd(S,Se) region and reduced absorber quality. Additionally, we investigated the carrier transport and collection properties in devices with photoinactive Cd(S,Se) and photoactive Cd(O,S,Se,Te) at the front interface to gain comprehensive understanding of the mechanisms that resulted in improved efficiencies approaching 20%.
CdTe deposition↗
Water-Assisted Lift-Off Process for Flexible CdTe Solar Cells
In recent years, various lift-off methods have been developed to fabricate lightweight and flexible cadmium telluride (CdTe)-based solar cells. In this work, we report flexible cadmium sulfide (CdS)/CdTe solar cells using a water-assisted lift-off approach. Here we demonstrate that an additional cadmium chloride treatment for the CdS film is critical to improve the grain size of CdS and the post-deposited CdTe film and the electron conductivity of the CdS film. As a result, the quality of the CdS/CdTe front junction is significantly improved with reduced nonradiative recombination. Finally, our lightweight and flexible polycrystalline CdTe solar cells demonstrate a champion power conversion efficiency of 12.6%.
14 SOLAR ENERGY↗
Post‐Annealing Treatment on Hydrothermally Grown Antimony Sulfoselenide Thin Films for Efficient Solar Cells
Herein, antimony sulfoselenide (Sb 2 (S, Se) 3 ) thin‐film solar cells are fabricated by a hydrothermal method followed by a post‐deposition annealing process at different temperatures and the impact of the annealing temperature on the morphological, structural, optoelectronic, and defect properties of the hydrothermally grown Sb 2 (S, Se) 3 films is investigated. It is found that a proper annealing temperature leads to high‐quality Sb 2 (S, Se) 3 films with large crystal grains, high crystallinity, preferred crystal orientation, smooth and uniform morphology, and reduced defect density. These results show that suppressing deep‐level defects is crucial to enhance solar cell performance. After optimizing the annealing process, Sb 2 (S, Se) 3 solar cells with an improved power conversion efficiency 2.04 to 8.48% are obtained.
14 SOLAR ENERGY↗
20%-efficient polycrystalline Cd(Se,Te) thin-film solar cells with compositional gradient near the front junction
Bandgap gradient is a proven approach for improving the open-circuit voltages (V OC s) in Cu(In,Ga)Se 2 and Cu(Zn,Sn)Se 2 thin-film solar cells, but has not been realized in Cd(Se,Te) thin-film solar cells, a leading thin-film solar cell technology in the photovoltaic market. Here, we demonstrate the realization of a bandgap gradient in Cd(Se,Te) thin-film solar cells by introducing a Cd(O,S,Se,Te) region with the same crystal structure of the absorber near the front junction. The formation of such a region is enabled by incorporating oxygenated CdS and CdSe layers. We show that the introduction of the bandgap gradient reduces the hole density in the front junction region and introduces a small spike in the band alignment between this and the absorber regions, effectively suppressing the nonradiative recombination therein and leading to improved VOCs in Cd(Se,Te) solar cells using commercial SnO 2 buffers. A champion device achieves an efficiency of 20.03% with a V OC of 0.863 V.
14 SOLAR ENERGY↗
Reduced Recombination and Improved Performance of CdSe/CdTe Solar Cells due to Cu Migration Induced by Light Soaking
The performance of CdTe solar cells has advanced impressively in recent years with the incorporation of Se. Instabilities associated with light soaking and copper reorganization have been extensively examined for the previous generation of CdS/CdTe solar cells, but instabilities in Cu-doped Se-alloyed CdTe devices remain relatively unexplored. In this work, we fabricated a range of CdSe/CdTe solar cells by sputtering CdSe layers with thicknesses of 100, 120, 150, 180, and 200 nm on transparent oxide-coated glass and then depositing CdTe by close-spaced sublimation. After CdCl 2 annealing, Cu-doping, and back metal deposition, a variety of analyses were performed both before and after light soaking to understand the changes in device performance. The device efficiency was degraded with light soaking in most cases, but devices fabricated with a CdSe layer thickness of 120 nm showed reasonably good efficiency initially (13.5%) and a dramatic improvement with light soaking (16.5%). Here, the efficiency improvement is examined within the context of Cu ion reorganization that is well known for CdS/CdTe devices. Low-temperature photoluminescence data and V oc versus temperature measurements indicate a reduction in nonradiative recombination due to the passivation of defects and defect complexes in the graded CdSe x Te 1–x layer.
CdSexTe1−x↗
Understanding the Interplay Between CdSe Thickness and Cu Doping Temperature in CdSe/CdTe Devices
Not provided.
Energy & Fuels↗
Templated Growth and Passivation of Vertically Oriented Antimony Selenide Thin Films for High-Efficiency Solar Cells in Substrate Configuration
Antimony selenide (Sb 2 Se 3 ) is a promising low-cost photovoltaic material with a 1D crystal structure. The grain orientation and defect passivation play a critical role in determining the performance of polycrystalline Sb 2 Se 3 thin-film solar cells. In this work, a seed layer is introduced on a molybdenum (Mo) substrate to template the growth of a vertically oriented, columnar Sb 2 Se 3 absorber layer by closed space sublimation. By controlling the grain orientation and compactness of the Sb 2 Se 3 seeds, obtain high-quality Sb 2 Se 3 absorber layers with passive Sb 2 Se 3 /Mo interfaces is obtained, which in turn improve the transport of photoexcited charge carriers through the absorber layer and its interfaces. Post-deposition annealing of absorber layers in ambient air is further utilized to passivate the defects in Sb 2 Se 3 and enhance the quality of the front heterojunction. As a result of systematic processing optimization, Sb 2 Se 3 planar heterojunction solar cells are fabricated in substrate configuration with a champion power conversion efficiency of 8.5%.
14 SOLAR ENERGY↗
Effects of Cu Precursor on the Performance of Efficient CdTe Solar Cells
Not provided.
Materials Science↗
Low-temperature and effective ex situ group V doping for efficient polycrystalline CdSeTe solar cells
CdTe solar cell technology is one of the lowest-cost methods of generating electricity in the solar industry, benefiting from fast CdTe absorber deposition, CdCl 2 treatment and Cu doping. However, Cu doping has low photovoltage and issues with instability. Doping group V elements into CdTe is therefore a promising route to address these challenges. Although high-temperature in situ group V doped CdSeTe devices have demonstrated efficiencies exceeding 20%, they face obstacles including post-deposition doping activation processes, short carrier lifetimes and low activation ratios. Here, we demonstrate low-temperature and effective ex situ group V doping for CdSeTe solar cells using group V chlorides. For AsCl 3 doped CdSeTe solar cells, the dopant activation ratio can be 5.88%, hole densities reach >2 × 10 15 cm -3 and carrier lifetime is longer than 20 ns. Thus, ex situ As doped CdSeTe solar cells show open-circuit voltages ~863 mV, compared to the highest open-circuit voltage of 852 mV for Cu doped CdSeTe solar cells.
14 SOLAR ENERGY↗
Enabling bifacial thin film devices by developing a back surface field using Cu x AlO y
Bifacial solar cells have the potential to increase the energy yield per unit area over traditional monofacial devices without significant added cost, driving $/kWh costs lower and accelerating the adoption of solar photovoltaics. However, the performance of bifacial thin film solar cells significantly lags that achieved by crystalline silicon cells. Here we incorporate wide bandgap Cu x AlO y as a back buffer layer for CdTe devices and achieve a backside illuminated device with high current density and high fill factor. Moreover, these values remain nearly constant even as the absorber layer thickness changes, indicating that a fully-depleted device is not required for efficient charge collection. We show that this response is indicative of a back surface field, albeit with a persistent high back surface recombination velocity. By managing electron reflection, we achieved a backside illumination conversion efficiency of 7.1% and bifaciality of 0.55 for a 3.3 µm CdTe device and 8.0% and 0.62 for a 2 µm device. Future improvements can be made by identifying and incorporating a passivation material that reduces the back surface recombination velocity.
36 MATERIALS SCIENCE↗
Back-Surface Passivation of CdTe Solar Cells Using Solution-Processed Oxidized Aluminum
Although back-surface passivation plays an important role in high-efficiency photovoltaics, it has not yet been definitively demonstrated for CdTe. Here, we present a solution-based process, which achieves passivation and improved electrical performance when very small amounts of oxidized Al 3+ species are deposited at the back surface of CdTe devices. The open circuit voltage (V oc ) is increased and the fill factor (FF) and photoconversion efficiency (PCE) are optimized when the total amount added corresponds to ~1 monolayer, suggesting that the passivation is surface specific. Addition of further Al 3+ species, present in a sparse alumina-like layer, causes the FF and PCE to drop as the interface layer becomes blocking to current flow. The optimized deposit increases the average baseline PCE for both Cu-free devices and devices where Cu is present as a dopant. The greatest improvement is found when the Al 3+ species are deposited prior to the CdCl 2 activation step and Cu is employed. In this case, the best-cell efficiency was improved from 12.6 to 14.4%. Furthermore, time-resolved photoluminescence measurements at the back surface and quantum efficiency measurements performed at the maximum power point indicate that the performance enhancement is due to a reduction in the interface recombination current at the back surface.
14 SOLAR ENERGY↗
Effects of post-deposition CdCl 2 annealing on electronic properties of CdTe solar cells
The effects of post-deposition CdCl 2 annealing temperature on the electronic properties of CdTe solar cells were investigated. CdTe devices incorporate Mg doped ZnO as a buffer layer and selenization using a CdSe interlayer for reducing the buffer/absorber interface recombination and increasing solar energy absorption respectively. The post-deposition CdCl 2 annealing treatments were done under separate, inert atmospheres of nitrogen and helium across the temperature range 380 to 430 °C. Electrical characterization of devices is carried out including temperature dependent current-voltage characteristics, admittance spectroscopy, and Shockley-Read-Hall recombination analysis. Here, the best improvements in device efficiency are obtained upon annealing at temperature 410 °C. This anneal correlated with reduced back contact barrier in CdTe and reduced grain-boundary barrier height which is beneficial for enhanced charge transport.
14 SOLAR ENERGY↗