Engineering topics
Lilly, Michael
Publications and source records attributed to Lilly, Michael.
Single-Shot Readout of a S/T Qubit with a Cryogenic AC-Coupled Amplifier in a Lithographic MOS Double Quantum Dot.
Abstract not provided.
Analyzing the fidelity of a singlet-triplet spin-orbit qubit in silicon using gate set tomography.
Abstract not provided.
Implications of the spin-orbit interaction for singlet-triplet qubits in silicon.
Abstract not provided.
Generalized model for tuning tunnel rates in a silicon quantum dot.
Abstract not provided.
Si quantum dots with focused ion beam implanted phosphorus donors.
Abstract not provided.
All-electrical universal control of a double quantum dot qubit in silicon MOS.
Abstract not provided.
Magnetotransport Measurements of MOS Material for Quantum Dots.
Abstract not provided.
A study of device designs for coherent donordot coupling in Si-MOS nanostructures.
Abstract not provided.
Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure.
Abstract not provided.
Implications of the spin-orbit effect for singlet-triplet qubit operation.
Abstract not provided.
Single Shot Pauli-Blockade in Lithographically Formed Few Electron MOS Double-Quantum-Dot Using a Single Layer Design.
Abstract not provided.
Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout
We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.
A split accumulation gate architecture for silicon MOS quantum dots.
Abstract not provided.
A split accumulation gate architecture for silicon MOS quantum dots.
Abstract not provided.