Engineering topics
Lilly, Michael
Publications and source records attributed to Lilly, Michael.
Two-axis control of a coupled quantum dot - donor qubit in Si-MOS.
Abstract not provided.
Semiconductor adiabatic qubits
A quantum computing device that includes a plurality of semiconductor adiabatic qubits is described herein. The qubits are programmed with local biases and coupling terms between qubits that represent a problem of interest. The qubits are initialized by way of a tuneable parameter, a local tunnel coupling within each qubit, such that the qubits remain in a ground energy state, and that initial state is represented by the qubits being in a superposition of |0> and |1> states. The parameter is altered over time adiabatically or such that relaxation mechanisms maintain a large fraction of ground state occupation through decreasing the tunnel coupling barrier within each qubit with the appropriate schedule. The final state when tunnel coupling is effectively zero represents the solution state to the problem represented in the |0> and |1> basis, which can be accurately read at each qubit location.
A split accumulation gate architecture for silicon MOS quantum dots.
Abstract not provided.
A split accumulation gate architecture for silicon MOS quantum dots.
Abstract not provided.
Direct Write Nanofabrication for Quantum Computing in Silicon and Color Centers in Diamond.
Abstract not provided.
Top-down Direct Write Nanofabrication of Donors in Silicon and Defect Centers in Diamond.
Abstract not provided.
Top-down Direct Write Nanofabrication of Donors in Silicon and Defect Centers in Diamond.
Abstract not provided.
Fabrictaion of Counted Donor Devices using Top-Down Ion Implantation.
Abstract not provided.
Single-Shot Charge Readout Using a Cryogenic HBT Preamplifier Inline with a Silicon SET at Millikelvin Temperatures.
Abstract not provided.
Cryogenic amplification readout and control of coupled quantum-dot and donor-spin qubits in silicon.
Abstract not provided.
Fabrication of Quantum Dots in Undoped SiGe with a single metal layer.
Abstract not provided.
Transport Measurements in Silicon Quantum Dots with Counted Phosphorus and Antimony Implants.
Abstract not provided.