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Lin, H. C.

Publications and source records attributed to Lin, H. C..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Effect of microwave-enhanced superconductivity in YBa2Cu3O7 Bi-crystalline grain bounda ry weak-links

We have studied systematically the effect of microwave irradiation on the temperature dependent resistivity (R(I) and the current-voltage (I-V) characteristics of YBa2Gu3O(7 - x) (YBCO) bicrystalline grain boundary weak-links (GBWL's), with grain boundary of three different tilt angles. The superconducting transition temperature, T(sub c), has significant enhancement upon microwave irradiation. The microwave enhanced T(sub c) is increased as a function of incident microwave power, but limited to an optimum power level. The GBWL's of 45 deg tilt boundary has shown to be most sensitive to the microwave irradiation power, and the GBWL's of 36.8 deg tilt boundary has displayed a moderate response. In contrast, no enhancement of T(sub c) was observed in the GBWL's of 24 deg tilt boundary, as well as in the uniform films. Under the microwave irradiation, the R(T) dependent is hystertic as the transition taken from superconducting state to normal state and vice versa. Mechanisms associated with the redistribution of nonequilibrium quasiparticles under microwave irradiation are discussed.

Fu, C. M.↗
NASA NTRS1994

Technology transfer of operator-in-the-loop simulation

The technology developed for operator-in-the-loop simulation in space teleoperation has been applied to Caterpillar's backhoe, wheel loader, and off-highway truck. On an SGI workstation, the simulation integrates computer modeling of kinematics and dynamics, real-time computational and visualization, and an interface with the operator through the operator's console. The console is interfaced with the workstation through an IBM-PC in which the operator's commands were digitized and sent through an RS-232 serial port. The simulation gave visual feedback adequate for the operator in the loop, with the camera's field of vision projected on a large screen in multiple view windows. The view control can emulate either stationary or moving cameras. This simulator created an innovative engineering design environment by integrating computer software and hardware with the human operator's interactions. The backhoe simulation has been adopted by Caterpillar in building a virtual reality tool for backhoe design.

Yae, K. H.↗
NASA NTRS1991

Direction discriminating hearing aid system

A visual display was developed for people with substantial hearing loss in either one or both ears. The system consists of three discreet units; an eyeglass assembly for the visual display of the origin or direction of sounds; a stationary general purpose noise alarm; and a noise seeker wand.

Jhabvala, M.↗
NASA NTRS1989

Directional Hearing Aid

Hearing-aid device indicates visually whether sound is coming from left, right, back, or front. Device intended to assist individuals who are deaf in at least one ear and unable to discern naturally directions to sources of sound. Device promotes safety in street traffic, on loading docks, and in presence of sirens, alarms, and other warning sounds. Quadraphonic version of device built into pair of eyeglasses and binaural version built into visor.

Jhabvala, M.↗
NASA NTRS1985

Defects and device performance

The necessity for a low-cost crystalline silicon sheet material for photovoltaics has generated a number of alternative crystal growth techniques that would replace Czochralski (Cz) and float-zone (FZ) technologies. Efficiencies of devices fabricated from low resistivity FZ silicon are approaching 20%, and it is highly likely that this value will be superseded in the near future. However, FZ silicon is expensive, and is unlikely ever to be used for photovoltaics. Cz silicon has many of the desirable qualities of FZ except that minority-carrier lifetimes at lower resistivities are significantly less than those of FZ silicon. Even with Cz silicon, it is unlikely that cost goals can be met because of the poor-material yield that results from sawing and other aspects of the crystal rowth. Although other silicon sheet technologies have been investigated, almost all have characteristics that limit efficiency to approx. 16%. In summary, 20% efficient solar cells can likely be fabricated from both FZ and Cz silicon, but costs are likely to be ultimately unacceptable. Alternate silicon technologies are not likely to achieve this goal, but cost per watt figures may be eventually better than either of the single crystal technologies and may rival any thin-film technology.

Storti, G.↗
NASA NTRS1981

A surface acoustic wave /SAW/ charge transfer imager

An 80 MHz, 2-microsecond surface acoustic wave charge transfer device (SAW-CTD) has been fabricated in which surface acoustic waves are used to create traveling longitudinal electric fields in the silicon substrate and to replace the multiphase clocks of charge coupled devices. The traveling electric fields create potential wells which will carry along charges that may be stored in the wells; the charges may be injected into the wells by light. An optical application is proposed where the SAW-CTD structure is used in place of a conventional interline transfer design.

Papanicolauo, N. A.↗
NASA NTRS1978

A monolithic SAW-charge transfer device

Surface acoustic waves excited in a Si-SiO2-ZnO layered structure can produce a traveling electric field in the silicon substrate. Charges stored in the traveling potential wells can be transferred at high speed and density and with less complexity. The monolithic structure under investigation for the SAW-charge transfer device consists of a silicon substrate, a thin silicon dioxide insulating layer on top of which a ZnO piezoelectric film is deposited by sputtering. The surface acoustic waves are excited by interdigital transducers. The signal charge is injected into traveling potential wells that travel with the velocity of sound. Conditions for the transfer of the charges by the traveling wells are analyzed. A surface acoustic wave program was used to determine the optimum structure dimensions and transducer configuration which will produce the highest coupling in the excitation of the piezoelectric waves.

Papanicolaou, N. A.↗
NASA NTRS1978

Investigation of charge coupled device correlation techniques

Analog Charge Transfer Devices (CTD's) offer unique advantages to signal processing systems, which often have large development costs, making it desirable to define those devices which can be developed for general system's use. Such devices are best identified and developed early to give system's designers some interchangeable subsystem blocks, not requiring additional individual development for each new signal processing system. The objective of this work is to describe a discrete analog signal processing device with a reasonably broad system use and to implement its design, fabrication, and testing.

Lampe, D. R.↗
NASA NTRS1978

The study of surface acoustic wave charge transfer device

A surface acoustic wave-charge transfer device, consisting of an n-type silicon substrate, a thermally grown silicon dioxide layer, and a sputtered film of piezoelectric zinc oxide is proposed as a means of circumventing problems associated with charge-coupled device (CCD) applications in memory, signal processing, and imaging. The proposed device creates traveling longitudinal electric fields in the silicon and replaces the multiphase clocks in CCD's. The traveling electric fields create potential wells which carry along charges stored there. These charges may be injected into the wells by light or by using a p-n junction as in conventional CCD's.

Papanicolaou, N.↗
NASA NTRS1978

A complementary DMOS-VMOS IC structure

A new complementary MOS structure has been fabricated consisting of a p-channel DMOS transistor and an n-channel double-diffused VMOS transistor. The transconductance of each transistor was between 0.85-0.98 of the theoretical transconductance. The threshold voltages have been adjusted by either ion implantation or by adjusting the diffusion profiles. The inverter operation is similar to that of standard CMOS.

Jhabvala, M.↗
NASA NTRS1976

Optimum load device for DMOS integrated circuits

Depletion-mode load devices can be integrated with DMOS transistors without any extra diffusions or ion implantation processing steps by judicious choice of the substrate crystal orientation and resistivity. For low voltage operation line-type 1, 1, 1 crystal orientation should be used. The line-type 1, 1, 1 crystal orientation also yields a higher transconductance for the DMOS transistor than the line-type 1, 0, 0 orientation. The geometry of the load device and the DMOS transistor can be made ratioless to conserve area. Self-aligned gates, hitherto considered incompatible with DMOS transistors, have been incorporated in the structure. The experimental DMOS inverters, using a conservative design, have achieved 4-ns propagation delay, 1.3-V operation, and 2-pJ propagation delay-power dissipation product.

Lin, H. C.↗
NASA NTRS1976

System implications of large radiometric array antennas

Current radiometric earth and atmospheric sensing systems in the centimeter wavelength range generally employ a directive antenna connected through a single terminal pair to a Dicke receiver. It is shown that this approach does not lend itself to systems with greatly increased spatial resolution. Signal to noise considerations relating to antenna efficiency force the introduction of active elements at the subarray level; thus, if Dicke switching is to be used, it must be distributed throughout the system. Some possible approaches are suggested. The introduction of active elements at the subarray level is found to ease the design constraints on time delay elements, necessary for bandwidth, and on multiple beam generation, required in order to achieve sufficient integration time with high resolution.

Levis, C. A.↗
NASA NTRS1976

Experimental investigation of a double-diffused MOS structure

Self-aligned polysilicon gate technology was applied to double-diffused MOS (DMOS) construction in a manner that retains processing simplicity and effectively eliminates parasitic overlap capacitance because of the self-aligning feature. Depletion mode load devices with the same dimensions as the DMOS transistors were integrated. The ratioless feature results in smaller dimension load devices, allowing for higher density integration with no increase in the processing complexity of standard MOS technology. A number of inverters connected as ring oscillators were used as a vehicle to test the performance and to verify the anticipated benefits. The propagation time-power dissipation product and process related parameters were measured and evaluated. This report includes (1) details of the process; (2) test data and design details for the DMOS transistor, the load device, the inverter, the ring oscillator, and a shift register with a novel tapered geometry for the output stages; and (3) an analytical treatment of the effect of the distributed silicon gate resistance and capacitance on the speed of DMOS transistors.

Lin, H. C.↗
NASA NTRS1976

Modeling of short channel MOS transistors

Higher frequency response in MOS technology can be obtained by shortening the channel length. One approach for doing this involves an employment of higher resolution lithography technology. A second approach makes use of a double-diffused MOS transistor (DMOS). It is pointed out that the ordinary method of modeling the transistors used in both approaches is not accurate. An investigation is conducted of the questions which have to be considered for DMOS modeling. The modeling of a short channel MOS transistor is discussed, taking into account the derivation of the threshold voltage equation. Excellent agreement between theoretical and experimental data shows the accuracy of the described modeling approach.

Lin, H. C.↗
NASA NTRS1975

Noise performance of very large antenna arrays

The maximum size and resolution of receiving antenna arrays is found to be limited by signal-to-noise ratio considerations. For square arrays containing no active elements, a practical limit at 30 GHz appears to be on the order of 10 meters for communications and one to two meters for radiometry. These limitations can be overcome by use of active devices at various levels of the array organization. The nature of the resulting tradeoffs is indicated. Explicit formulas are developed for both passive and active arrays, and sample computations and the computer programs are given.

Lin, H. C.↗