NASA NTRS · 19780060024
A complementary DMOS-VMOS IC structure
Abstract
A new complementary MOS structure has been fabricated consisting of a p-channel DMOS transistor and an n-channel double-diffused VMOS transistor. The transconductance of each transistor was between 0.85-0.98 of the theoretical transconductance. The threshold voltages have been adjusted by either ion implantation or by adjusting the diffusion profiles. The inverter operation is similar to that of standard CMOS.
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Jhabvala, M., Lin, H. C.. 1978-07-01. A complementary DMOS-VMOS IC structure. https://ntrs.nasa.gov/citations/19780060024
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