Engineering topics

Lindau, I.

Publications and source records attributed to Lindau, I..

5 records

NASA NTRS1990

Band bending at Al, In, Ag, and Pt interfaces with CdTe and ZnTe (110)

UV and X-ray photoelectron spectroscopic methods are presently used to study the band-bending behavior and interfacial chemistry of Al, In, Ag, and Pt overlayers on vacuum-cleaved p-CdTe and p-ZnTe (110). All four metals are found to yield Schottky barriers on CdTe and ZnTe. The metal-induced gap states model prediction of a difference in barrier heights for two semiconductors which is dependent on their band lineup is borne out by the results for Ag, Pt, and Al, but not for In. Reaction and intermixing for Al, Ag, and Pt overlayers on CdTe and ZnTe indicate that these interfaces are not ideal.

Wahi, A. K.↗

NASA NTRS1989

CdTe and ZnTe metal interface formation and Fermi-level pinning

Interfacial morphology and Fermi-level pinning behavior at the interfaces of Al, Ag, and Pt with UHV-cleaved CdTe and ZnTe are studied using X-ray photoelectron and ultraviolet photoemission spectroscopies. Results are compared to metal/HgCdTe interface formation. For Al/CdTe, a case is found where significantly greater intermixing occurs in CdTe than seen on HgCdTe. The Al/ZnTe interface is also more abrupt than Al/CdTe. Band bending results for interfaces of all three metals with p-CdTe and p-ZnTe are presented and implications for metal/HgZnTe interface formation are considered.

Wahi, A. K.↗

NASA NTRS1989

Research and development of HgZnTe as an infrared material

Interfacial morphology and Fermi level pinning behavior at the interfaces of Al, Ag, and Pt with UHV-cleaved CdTe and ZnTe have been studied using X-ray and ultraviolet photoemission spectroscopies. Results are compared to metal/HgCdTe interface formation, where the weak HgTe bond and consequent ease of Hg loss strongly influence semiconductor disruption and metal-semiconductor intermising. For Al/CdTe, the strong Al-Te reaction yields a significantly more extensive Al-Te reacted region than has been observed for HgCdTe. The Al/ZnTe interface is observed to be more abrupt than Al/CdTe. The final Fermi level pinning positions, Ef-Evbm for Al, Ag, and Pt on p-type CdTe and p-ZnTe have been determined. Efi is found to be roughly the same for both CdTe and ZnTe, with the value for ZnTe lying approximately 0.2 eV closer to the VBM for all three metals. From these results, one would expect Schottky barriers of about the same height for these metals on p-CdTe and p-ZnTe; and also that, in principle, metal interfaces with the two alloys HgCdTe and HgZnTe would have the same properties. Comparisons and implications for electrical behavior of metal contacts to the alloys are discussed.

Wahi, A. K.↗

NASA NTRS1984

Electron escape depth variation in thin SiO2 films measured with variable photon energy

A double crystal monochromator at the Stanford Synchrotron Radiation Laboratory is used to study the Si/SiO2 interface, using photon energies of hv = 1950-3700 eV. This photon energy range allows interfaces to be observed through oxide layers 50 A thick or more. Variations in electron escape depth and/or oxide density as a function of distance from the interface are observed over the entire kinetic energy range (100-3600 eV). These differences are attributed to a strained oxide layer near the interface.

Hecht, M. H.↗

NASA NTRS1984

Surface sensitive photoemission EXAFS: A new structural tool

A new technique for surface EXAFS has been developed. In this technique the absorption fine structure is observed by monitoring the photoelectrons emitted from core levels as a function of photon energy. The surface sensitivity is achieved by detecting elastic photoelectrons that escape to the vacuum from a few atomic layers near the surface. EXAFS from Mn 3p and F2s outer core levels in MnF2 were measured, the results were compared with transmission EXAFS from Mn ls core level and good agreement was found. This development is significant because: (1) almost all elements have suitable core levels of low binding energy; (2) since photopeaks from adjacent core levels do not cross as the photon energy is varied, the limitations imposed on other surface EXAFS techniques by this interference is removed. Auger electrons, which have fixed kinetic energies and so can cross photopeaks, will generally have low energies if they originate from outer core levels and be unlikely to appear in the EXAFS region of kinetic energies, i.e., in excess of about 50 eV; (3) VUV light is used, which greatly extends the usable range of photon energies; (4) more than one element in a solid may be studied with the same monochromator. The experiments were carried out on the VUV beam line U14A at NSLS.

Choudhary, K. M.↗