NASA NTRS · 19840054798
Electron escape depth variation in thin SiO2 films measured with variable photon energy
Abstract
A double crystal monochromator at the Stanford Synchrotron Radiation Laboratory is used to study the Si/SiO2 interface, using photon energies of hv = 1950-3700 eV. This photon energy range allows interfaces to be observed through oxide layers 50 A thick or more. Variations in electron escape depth and/or oxide density as a function of distance from the interface are observed over the entire kinetic energy range (100-3600 eV). These differences are attributed to a strained oxide layer near the interface.
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Hecht, M. H., Grunthaner, F. J., Pianetta, P., Johansson, L. I., Lindau, I.. 1984-06-01. Electron escape depth variation in thin SiO2 films measured with variable photon energy. https://ntrs.nasa.gov/citations/19840054798
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