Engineering topics
Publications and source records attributed to Lutwack, R..
Correct placement helps prevent contamination while eliminating crack-causing deposits. Repositioning quartz liner in silicon fluidized-bed reactor prevents cracking of liner when cools. Liner protects stainless-steel walls of reactor from abrasion by particles in fluidized bed. Prevents contamination of newly formed silicon by material abraded from wall and ensures high-quality product.
The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.
Modified Siemens reactor enables chemical vapor deposition (CVD) of silicon to occur simultaneously on inner and outer surfaces of hollow cylinder, resulting in increase in mass of silicon deposited per unit time. Outer reactor for silicon deposition made from quartz or stainless steel. Hollow cylinder either single resistance-heated hollow cylinder about 5 to 10 cm or greater in diameter or 1-cm-diameter rods aligned in circular channels at top and bottom, initial circles being 5 to 10 cm in diameter or greater.
Proposed metallurgical process yields amorphous ternary alloys of any range of desired compositions. Process produces homogenous alloys even when proportions of constituent metals are not those that exist in equilibrium at solidification temperature. Such alloys are well suited to use in gas turbines and advanced engines.
Topics reviewed include: polysilicon material requirements; effects of impurities; requirements for high-efficiency solar cells; economics; development of silane processes; fluidized-bed processor development; silicon purification; and marketing.
Waste reduced, and silicon production rate improved. In new process silicon formed by thermal decomposition of SiH4. Part of silicon formed on silicon seed particles as result of surface chemical reaction. However, silicon formed by homogeneous reaction in gas phase tends to form aggregates of silicon atoms, which appear as fine particles (like dust). Believed that scavenging action of seed particles enables large fraction fines to be incorporated onto seed surface. This mode of growth confirmed by electron microscopy photographs.
Silicon material activities are described. Topics discussed include: fluidized bed technology, model predictions (reaction kinetics and grid design parameters), seed-particle cleaning procedure, runaway nucleation, thermal analysis of dendritic ribbons, and residual stress in dendritic ribbons.
Photovoltaic arrays that convert solar energy into electrical energy can become a cost effective bulk energy generation alternative, provided that an adequate supply of low cost materials is available. One of the key requirements for economic photovoltaic cells is reasonably priced silicon. At present, the photovoltaic industry is dependent upon polycrystalline silicon refined by the Siemens process primarily for integrated circuits, power devices, and discrete semiconductor devices. This dependency is expected to continue until the DOE sponsored low cost silicon refining technology developments have matured to the point where they are in commercial use. The photovoltaic industry can then develop its own source of supply. Silicon material availability and market pricing projections through 1988 are updated based on data collected early in 1984. The silicon refining industry plans to meet the increasing demands of the semiconductor device and photovoltaic product industries are overviewed. In addition, the DOE sponsored technology research for producing low cost polycrystalline silicon, probabilistic cost analysis for the two most promising production processes for achieving the DOE cost goals, and the impacts of the DOE photovoltaics program silicon refining research upon the commercial polycrystalline silicon refining industry are addressed.
The Silicon Material Task of the Flat-Plate Solar Array Project was assigned the objective of developing the technology for low-cost processes for producing polysilicon suitable for terrestrial solar-cell applications. The Task program comprised sections for process developments for semiconductor-grade and solar-cell-grade products. To provide information for deciding upon process designs, extensive investigations of the effects of impurities on material properties and the performance of cells were conducted. The silane process of the Union Carbide Corporation was carried through several stages of technical and engineering development; a pilot plant was the culmination of this effort. The work to establish silane fluidized-bed technology for a low-cost process is continuing. The advantages of the use of dichlorosilane is a siemens-type were shown by Hemlock Semiconductor Corporation. The development of other processes is described.
The growth of silicon on seed particles from the pyrolysis of silane in a fluidized bed reactor (FBR) was studied. The grown particles were shown to be crystalline and to have a structure which has been interpreted to indicate growth by chemical vapor deposition as well as by the collection (scavenging) of silicon clusters on seed particle surfaces. Scanning electron microscopy was used to study the product morphology.
Molten-silicon pool receives fine silicon powder and melts it. After stable molten layer forms, pedestal is lowered at rate equal to siliconpowder feed rate. If silane is directly decomposed on silicon pool, powder feeder is replaced by jet of silane on silicon surface, and hydrogen produced in decomposition of solane is pumped from bottom end of chamber.
Silicon has been the basic element for the electronic and photovoltaic industries. The use of silicon as the primary element for terrestrial photovoltaic solar arrays is projected to continue. The reasons for this projection are related to the maturity of silicon technology, the ready availability of extremely pure silicon, the performance of silicon solar cells, and the considerable present investment in technology and manufacturing facilities. The technologies for producing semiconductor grade silicon and, to a lesser extent, refined metallurgical grade silicon are considered. It is pointed out that nearly all of the semiconductor grade silicon is produced by processes based on the Siemens deposition reactor, a technology developed 26 years ago. The state-of-the-art for producing silicon by this process is discussed. It is expected that efforts to reduce polysilicon process costs will continue.
Material imperfections, impurity clusters and fabrication defects across the back-surface-field junction can degrade the performance of high-efficiency solar cells. The degradation from defects appearing on the circumference of a solar cell is analyzed using a two-region developed perimeter device model. The width of the defective perimeter region is characterized by the range or the distance-of-influence of the defective edge and this width is about two diffusion lengths. The defective edge is characterized by a surface recombination velocity. Family of theoretical curves and numerical examples are presented to show that significant reduction of open-circuit voltage can occur in high-efficiency cells which are thin compared with the diffusion length. In one example, the degradation is decreased from 135 mV to 75 mV when the cell size is increased from 10 to 100 times the diffusion length in a thin cell whose thickness is 1% of the diffusion length.
A computer-aided-design study on the dependence of the efficiency peak of a back-surface field solar cell on the concentrations of the recombination and dopant impurities is presented. The illuminated current-voltage characteristics of more than 100 cell designs are obtained using the transmission line circuit model to numerically solve the Shockley equations. Using an AM 1 efficiency of 17% as a target value, it is shown that the efficiency versus thickness dependence has a broad maximum which varies by less than 1% over more than a three-to-one range of cell thicknesses from 30 to 100 microns. An optically reflecting back surface will give only a slight improvement of AM 1 efficiency, about 0.7%, in this thickness range. Attention is given to the dependence of the efficiency on patchiness across the back-surface field low-high junction in thin cells.
The degradation of solar cell performance due to bulk defects distributed across the back-surface field junction is analyzed in terms of a three-region developed-perimeter model. Families of curves are computed and their physical significance is discussed in detail with reference to three parameters used to characterize the defects: defect area, defect density, and defect surface recombination velocity. A reduction in the open-circuit voltage due to the presence of a defect is expressed as a function of the defect area, density, cell thickness, and defect surface recombination velocity. Numerical examples are presented to illustrate the importance of the particular defect parameters.
Silane decomposition in a fluidized-bed reactor (FBR) process development unit (PDU) to make semiconductor-grade Si is reviewed. The PDU was modified by installation of a new heating system to provide the required temperature profile and better control, and testing was resumed. A process for making trichlorosilane by the hydrochlorination of metallurgical-grade Si and silicon tetrachloride is reported. Fabrication and installation of the test system employing a new 2-in.-dia reactor was completed. A process that converts trichlorosilane to dichlorosilane (DCS), which is reduced by hydrogen to make Si by a chemical vapor deposition step in a Siemens-type reactor is described. Testing of the DCS PDU integraled with Si deposition reactors continued. Experiments in a 2-in.-dia reactor to define the operating window and to investigate the Si deposition kinetics were completed.
Zinc is a major residue impurity in the preparation of solar-grade silicon material by the zinc vapor reduction of silicon tetrachloride. This paper projects that in order to get a 17-percent AM1 cell efficiency for the Block IV module of the Low-Cost Solar Array Project, the concentration of the zinc recombination centers in the base region of silicon solar cells must be less than 4 x 10 to the 11th Zn/cu cm in the p-base n+/p/p+ cell and 7 x 10 to the 11th Zn/cu cm in the n-base p+/n/n+ cell for a base dopant impurity concentration of 5 x 10 to the 14 atoms/cu cm. If the base dopant impurity concentration is increased by a factor of 10 to 5 x 10 to the 15th atoms/cu cm, then the maximum allowable zinc concentration is increased by a factor of about two for a 17-percent AM1 efficiency. The thermal equilibrium electron and hole recombination and generation rates at the double-acceptor zinc centers are obtained from previous high-field measurements as well as new measurements at zero field described in this paper. These rates are used in the exact dc-circuit model to compute the projections.
A reduction in the cost of silicon for solar cells is an important objective in a project concerned with the reduction of the cost of electricity produced with solar cells. The cost goal for the silicon material is about $14 per kg (1980 dollars). The process which is currently employed to produce semiconductor grade silicon from trichlorosilane is not suited for meeting this cost goal. Other processes for producing silicon are, therefore, being investigated. A description is presented of results obtained for the DCS process which involves the production of dichlorosilane as a silicon source material for solar energy silicon. Major benefits of dichlorosilane as a silicon source material include faster reaction rates for chemical vapor deposition of silicon. The DCS process involves the reaction 2SiHCl3 yields reversibly SiH2Cl2 + SiCl4. The results of a cost analysis indicate a total product cost without profit of $1.29/kg of SiH2Cl2.