Diffusion of impurities into silicon from gaseous sources
Diffusion of impurities into silicon from gaseous sources
SILICON↗
Engineering topics
Mc Louski, R. M.
Publications and source records attributed to Mc Louski, R. M..
Impurity diffusion process for silicon semiconductors is fast and precise
Impurity diffusion process produces precision silicon semiconductor junctions economically and fast. Oxide is deposited on a silicon wafer and a controlled concentration of impurity atoms in gaseous form is simultaneously introduced into the reaction.
Mc ~louski, R. M.↗
TEOS oxide studies Final project report, 15 Feb. - 15 Aug. 1965
Chemical deposition of silicon dioxide films by tetraethyl orthosilicate decomposition and doped silicon dioxide films as diffusion sources
DIFFUSION↗