NASA NTRS · 19650000298
Impurity diffusion process for silicon semiconductors is fast and precise
Abstract
Impurity diffusion process produces precision silicon semiconductor junctions economically and fast. Oxide is deposited on a silicon wafer and a controlled concentration of impurity atoms in gaseous form is simultaneously introduced into the reaction.
Keep this discovery
Explore connections, maps & timelines
Mc ~louski, R. M., Mc Louski, R. M., Skouson, G. W.. 1965-10-01. Impurity diffusion process for silicon semiconductors is fast and precise. https://ntrs.nasa.gov/citations/19650000298
Cite the original work for its findings. Save a collection to share your selection of sources.