Isolation of components on a silicon wafer using SiO2
Isolation of components on silicon wafer by groove etching and silicon dioxide deposition
ISOLATION↗
Engineering topics
Skouson, G. W.
Publications and source records attributed to Skouson, G. W..
Impurity diffusion process for silicon semiconductors is fast and precise
Impurity diffusion process produces precision silicon semiconductor junctions economically and fast. Oxide is deposited on a silicon wafer and a controlled concentration of impurity atoms in gaseous form is simultaneously introduced into the reaction.
Mc ~louski, R. M.↗
Phase III of groove etch studies, oxide barrier isolation Final report, 1 Feb. - 1 Jun. 1965
Oxide barrier isolated regions of silicon single crystals in silicon dioxide matrix by epitaxial deposition and chemical etching for integrated circuit device
EPITAXIAL DEPOSITION↗
Epitaxial process for development for monolithic complementary MOS-FET structure with oxide barrier isolation Final report, 15 Mar. - 15 Sep. 1965
Oxide isolated islands of N and P type silicon semiconductors by epitaxial deposition and etching for complimentary MOS-FET devices
EPITAXIAL DEPOSITION↗
Epitaxial process development for monolithic complementary MOS-FET structures with P-N JUNCTION isolation Final report, 1 Feb. - 15 Jul. 1965
Epitaxial deposition of P-type silicon into etche grooves in N-type silicon for P-N junction for complimentary MOS-FET devices
P-N JUNCTION↗