NASA NTRS · 19660006701
Epitaxial process development for monolithic complementary MOS-FET structures with P-N JUNCTION isolation Final report, 1 Feb. - 15 Jul. 1965
Abstract
Epitaxial deposition of P-type silicon into etche grooves in N-type silicon for P-N junction for complimentary MOS-FET devices
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Skouson, G. W.. 1965-01-01. Epitaxial process development for monolithic complementary MOS-FET structures with P-N JUNCTION isolation Final report, 1 Feb. - 15 Jul. 1965. https://ntrs.nasa.gov/citations/19660006701
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