NASA NTRS · 19660006699
Epitaxial process for development for monolithic complementary MOS-FET structure with oxide barrier isolation Final report, 15 Mar. - 15 Sep. 1965
Abstract
Oxide isolated islands of N and P type silicon semiconductors by epitaxial deposition and etching for complimentary MOS-FET devices
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Skouson, G. W.. 1965-01-01. Epitaxial process for development for monolithic complementary MOS-FET structure with oxide barrier isolation Final report, 15 Mar. - 15 Sep. 1965. https://ntrs.nasa.gov/citations/19660006699
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